Microwave detected photoconductivity

Next generation contactless measurement heads with so far not seen sensitivity allow for high speed semiconductor characterisation at µ-PCD or steady state excitation conditions over a wide range of injection levels from ultra low to high injection.

Key facts

• full two dimensional wafer maps of minority carrier lifetime in less than 1 second allow for low cost statistical process control and material quality characterisation

• ingot maps with 1 mm resolution are taken in less than two minutes, two block sides at the same time

• simultaneous measurement of minority carrier lifetime, photoconductivity and resistivity maps

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