• completely contactless destruction free electrical semiconductor characterisation

• special “underneath the surface” lifetime measurement technique

• advanced sensitivity for visualisation of so far invisible defects

• automated cut criteria definition

• spacial resolved p/n conduction type transformation detection

Advantages

• Stand alone tool series for offline brick or wafer characterisation. Simultaneous mapping of minority carrier lifetime, photoconductivity, resistivity, p/n conduction type change and geometrical sample flatness.

• Measurement speed of less than four minutes for a 156 x 156 x 400 mm standard brick at 1 mm resolution, all five maps at the same time.

• Robust design and easy setup heavy duty performance. For setup only a power cord is needed. Workstation with database is included in the underneath compartment.

• operator modus: quick standard measurement

• ingot maps and line scans

• parameter auto setting

• R&D modus: highly flexible measurements

• access to original measurement data

options

• resistivity line scan

• p/n equivalent maps with 1 mm² ­resolution

• iron mapping capability

samples

• typical samples: multi silicon brick, wafer

• brick size: between 125 x 125 to 210 x 210 mm², wafers up to 300 mm diameter, maximum brick length: 500 mm

• resistivity: 0.2 - 10³ Ohm cm

• conduction type: p, n

• material: multi- or monocrystalline silicon

• properties measureable: lifetime (steady state or non equilibrium (μ-PCD) selectable), photoconductivity

• excitation: 980 nm default

• measurement time : for instance 1 mm resolution 156 x 156 mm², 300 mm long: less than four minutes

• dimension: 1000 x 720 x 1500 mm, weight: 200 kg

• power: 110/220 V, 50/60 Hz, 6 A