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Electrical characterisation tool for mapping of ingots and wafers with measurement times of less than ten minutes for an 500 mm ingot at 1 mm resolution.
MDP ingot - Ingot or wafer mapping system for routine electrical characterisation.
Stand alone tool series for offline brick or wafer characterisation. Simultaneous measurement of minority carrier lifetime, photoconductivity, resistivity and sample flatness. Measurement speed of less than 5 minutes for a 156x156x400 mm standard brick @ 1 mm resolution all maps at the same time. Robust design and easy setup for long performance. For setup only a power cord is needed. Workstation with database are included in the underneath compartment.
Thought to be used for quality monitoring of processes and material of mono or polycrystalline silicon. Automated output of cut criteria for poly silicon bricks.
Facts
contactless destruction free electrical semiconductor characterisation
mapping capability of minority carrier lifetime, photoconductivity
advanced sensitivity for visualisation of so far invisible defects
automated cut criteria definition
Detail
operator modus: quick standard measurement
options
ingot maps and linescans
parameter autosetting
F&E modus: highly flexible measurement
samples
sample: ingot
sample size: between 125 x 125 to 210 x 210 mm², wafer up to 300 mm diameter
maximum length 500 mm
resistivity: 0.1 - 10³ Ohm cm
conduction type: p, n
material: multi- or monocrystalline silicon
properties measureable: lifetime (steady state or non equilibrium(μ-PCD) selectable), photoconductivity
excitation: 980 nm default
measurement time depending on sample: for instance 1 mm resolution 156 x 156 mm², 300 mm long: approximately 10 minutes
options
resistivity map 1 cm² resolution
p/n equal map 1 mm² resolution
iron mapping capability
Case Studies
Iron concentration determination
The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. With the MDPingot tool it is possible to measure the iron concentration in an ingot inline and the laboratory tool MDPmap09 also enables very high resolution maps of the iron concentration.
p/n detection
Changes in the conduction type of a multicrystalline ingot are frequent, since a high co dopant concentration is typical for the low quality feedstock, that is used in PV industry. With the MDPingot tool it is possible to detect pn-changes with a 1 mm resolution.
Highly spatial resolved inline metrology on Multicrystalline Silicon
Non-destructive measurements of minority carrier lifetime are well established and widely used for process control and characterization of defects in crystalline silicon. With our novel tools MDPingot and MDPinline it is possible to map the minority carrier lifetime with a so far unsurpassed combination of spatial resolution, sensitivity and measurement speed.
Correlations with shunts and other crystallographic defects demonstrate the potential of these tools, e.g. investigation of passivation homogeneity, statistical monitoring and process control or monitoring of furnace properties.
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