State of the art system for topographic electrical characterisation of multicrystalline bricks in fabs with high throughput. Total measurement times of less than two minutes at 1 mm resolution, two brick sides simultaneously.

MDP inline ingot - fast ingot mapping system for high throughput multicristalline silicon fabs

MDPinline ingot systems are worldwide the fastest measurement tools available for electrical characterisation of multicrystalline silicon bricks. They are designed for single brick investigation in high throughput production fabs. Every brick can be measured on two sides in less than two minutes all maps at the same time. Measurement parameters are lifetime and conduction type equivalent maps with 1 mm resolution as well as resistivity linescans.

The system includes a database and statistical data evaluation which can be used for automated determination of precise cut positions for yield improvement, for material quality monitoring and for furnace selection and process improvement.

Facts

  • contactless destruction free electrical semiconductor characterisation

  • mapping capability of minority carrier lifetime

  • advanced sensitivity for visualisation of so far invisible defects

  • automated cut criteria definition

  • steady state measurements for extraction of bulk properties

  • completely automated for inline ­integration

  • 2-dimensional brick mapping system for solar grade silicon, one millimetre resolution, measurement time: one ingot in less than 2 minutes, 2 surfaces at a time

 

Advantages

  • World record speed for inline multicrystalline silicon brick characterisation for advanced PV fabs. Measurement of carrier lifetime with one millimeter resolution in less than two minutes at two brick sites. Spatial resolved measurement of conduction type changes as well as resistivity linescans are measured at the same time.

  • Customer defined brick cut criteria can be transmitted to the fab database which allows a fully automated material monitoring for next generation photovoltaic fabs. Enables material quality control and monitoring of furnace performance, and failure analysis.

  • Special “underneath the surface” measurement technique reduces distortion of data by surface recombination considerably.

Detail

  • fully automated

  • ingot maps and linescans

 

Options

  • resistivity map with 1 cm² resolution

  • p/n equivalent map with 1 mm² ­resolution

  • iron mapping capability

 

Specifications

  • sample: multi silicon brick

  • sample size: between 125 x 125 to 210 x 210 mm²

  • maximum brick length: 600 mm

  • resistivity: 0.2 - 10³ Ohm cm

  • conduction type: p, n

  • material: multicrystalline silicon

  • properties measureable: lifetime (steady state or non equilibrium (μ-PCD) selectable), photoconductivity

  • excitation: 980 nm default

  • measurement time depending on sample: for instance 1 mm resolution 156 x 156 mm², 300 mm : much less than two minutes

  • dimension: 2300 x 800 x 1200 mm, weight: 250 kg

  • power: 110/220V, 50/60 Hz, 8 A

Media