• contactless destruction free electrical semiconductor characterisation

• mapping capability of minority carrier lifetime, photoconductivity

• advanced sensitivity for visualisation of so far invisible defects

• automated cut criteria definition

two dimensional ingot mapping system for solar grade silicon one millimeter resolution, measurement time: one ingot in 2 minutes, two surfaces at a time

• ingot maps and linescans @ 2 min a ingot 1 min resolution

• parameter autosetting

• sample: ingot

• sample size: between 156 x 156 mm² (other sizes on request)

• maximum length 500 mm

• resistivity: 0.1 - 10³ Ohm cm

• conduction type: p, n

• material: multi- or monocrystalline silicon

• properties measureable: lifetime (steady state or non equilibrium(μ-PCD) selectable)

• excitation: 980 nm default

options

• resistivity map 1 cm² resolution

• p/n equal map 1 mm² resolution

• iron mapping capability