home | contact | legal | print page
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
MDP inline - inline full wafer mapping at one wafer a second
MDPinline is a compact high speed production integrated mapping tool for quantitative measurements of carrier lifetime. Topograms are measured ‘on the fly’ in less than a second a wafer while the wafers are moved underneath the instrument by the conveyor as installed in the factory.
The instrument itself uses no mechanically moving parts making it extremely reliable also under continuous operation. The availability of a full topogram for each individual wafer offers new ways to increase the cost effectiveness and efficiency of production lines which were so far completely out of scope. For example, an automated statistical evaluation of 10.000 wafer topograms, which are obtained within less than three hours, reveal surprisingly fine details of the performance of crystal growth furnaces as well as material quality. Processing steps such as diffusion and passivation may be ramped up and optimised within so far impossible timescales at highest performance, due to real time quality and homogeneity investigation. In the running production, any failure of a processing step may be detected immediately. On the other hand, if wafers are sold to a customer, higher prices are achieved, if each wafer exhibits a guaranteed performance leading to a return of investment for the MDPinline within less than a year.
Facts
contactless destruction free electrical semiconductor characterisation
production integrated high speed wafer mapping, suitable for statistical process control (SPC)
allows to identify cell efficiency limiting material and processes at early production stages
suitable for single wafer investigation
complete two dimensional wafer map, in less than one second
mapping capability of: carrier lifetime, line scan of resistivity
advanced sensitivity for visualisation of so far invisible defects also in processed wafers
easy to integrate, statistical data output and quality class definition
Advantages
Full electrical wafer characterisation at speeds up to one wafer in less than a second. Measured parameters: Carrier lifetime (full topogram), resistivity (two line scans).
So far not seen efficiency of process control, yield and process improvement allow for an extremely fast upramping of new fabs or processes, since statistical information from thousands of wafers are obtained in a very short period of time.
Suitable for measurement of material quality of outgoing or incoming wafers as well as identification of crystallisation problems at wafer level for instance in PV industry. Well suited for diffusion process integrity control, passivation efficiency and homogeneity control.
Detail
allows for single wafer control
parameter auto setting, predefined sorting recipes
up to 15 quality classes automated wafer sorting
monitoring of material quality, process integrity and stability
fast up ramping of processes and production lines
Specifications
sample thickness: 100 μm up to 1 mm
sample size: between 125 x 125 to 210 x 210 mm² or 4” up to 18”
resistivity: 0.2 - 10³ Ohm cm
conduction type: p, n
material: silicon wafer, partially or fully processed wafers, compound semiconductors and beyond
measurable properties: minority carrier lifetime (steady state or non equilibrium (μ-PCD) selectable)
measurement spot: 2.8 mm default, others possible
measurement time: less than 1 second for each full wafer map
dimension: 400 x 400 x 450 mm, weight: 29 kg
power: 24 V DC, 4 A
Case Studies
Passivation homogeneity
For many applications samples may exhibit a passivated surface. With MDPmap09 it is possible to investigate the quality and homogeneity of the passivation with a high resolution.
Highly spatial resolved inline metrology on Multicrystalline Silicon
Non-destructive measurements of minority carrier lifetime are well established and widely used for process control and characterization of defects in crystalline silicon. With our novel tools MDPingot and MDPinline it is possible to map the minority carrier lifetime with a so far unsurpassed combination of spatial resolution, sensitivity and measurement speed.
Correlations with shunts and other crystallographic defects demonstrate the potential of these tools, e.g. investigation of passivation homogeneity, statistical monitoring and process control or monitoring of furnace properties.
Media
-
multicrystalline silicon wafers
download
(136.5 kB, 517x316) -
Si3N4 and SiC segregates in multi-crystalline silicon
download
(89.6 kB, 210x191) -
Microcrystalline inclusions
download
(79.9 kB, 216x196) -
Investigation of passivation quality...
download
(123.8 kB, 251x229) -
Cz-Si with bulk defects, separation...
download
(106.7 kB, 258x238)
News
Freiberg Instruments GmbH | Am St. Niclas Schacht 13 | D-09599 Freiberg/Germany || t +49 3731 41954 0 | f +49 3731 41954 14 || contact | how to find us || creation: 599media GmbH