Production in­te­grated high speed wafer mapping suit­able for single wafer in­vesti­gation at less than one second a wafer.

MDP inline - inline full wafer mapping at one wafer a second

Full electrical wafer characterisation at up to one wafer a second allow for single wafer control, measuring parameters like lifetime and resistivtiy. Which leeds to a so far not seen quality of process control, yield and process improvement as well as a fast upramping of any new fab or process. Suitable for measurement of material quality of outgoing or incoming wafers as well as identification of crystallisation problems at wafer level for instance in PV industry.

  • contactless destruction free electrical semiconductor characterisation

  • production integrated high speed wafer mapping

  • suitable for single wafer investigation

  • complete two dimensional full wafer map, at one wafer a second

  • mapping capability of: minority carrier lifetime

  • linescan of: resistivity

  • advanced sensitivity for visualisation of so far invisible defects

Facts

  • allows for single wafer control

  • parameter autosetting

  • up to 15 class wafer sorting

  • monitoring of material, process quality and stability samples

Detail

  • sample thickness: 100 μm to 5 mm wafer

  • sample size: anything between 125 x 125 to 210 x 210 mm² or 4” up to 18”

  • resistivity: 0.1 - 10³ Ohm cm

  • conduction type: p, n

  • material: silicon wafer, epi layers, partially or fully processed wafers, compound semiconductors

  • properties measureable: lifetime (steady state or non equilibrium(μ-PCD) selectable

  • measurement spot 2.8 mm default, others possible

  • measurement time: less than 1 second for each full wafer map

Case Studies

Passivation homogeneity

For many applications samples may exhibit a passivated surface. With MDPmap09 it is possible to investigate the quality and homogeneity of the passivation with a high resolution.

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Highly spatial resolved inline metrology on Multicrystalline Silicon

Non-destructive measurements of minority carrier lifetime are well established and widely used for process control and characterization of defects in crystalline silicon. With our novel tools MDPingot and MDPinline it is possible to map the minority carrier lifetime with a so far unsurpassed combination of spatial resolution, sensitivity and measurement speed.

Correlations with shunts and other crystallographic defects demonstrate the potential of these tools, e.g. investigation of passivation homogeneity, statistical monitoring and process control or monitoring of furnace properties.

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