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Offline tool for very versatile contactless electrical characterisation of semiconductor wafers or partially processed wafers. Ideal for efficient routine measurements as well as for sophisticated R&D applications.
MDP map - flexible mapping tool for R&D or production monitoring
MDPmap is designed as a compact bench top contactless electrical characterisation tool for offline production control or R&D, measuring parameters like carrier lifetime, photoconductivity, resistivity and defect information over a wide injection range in steady state or short pulse excitation (μ-PCD). Automated sample recognition and parameter setup allows an easy adaption to a big variety of different samples comprising epitaxial layers, after various preparation stages ranging from as-grown wafers to up to 95% metallised ones.
The major advantage of MDPmap is its high flexibility. Which allows for instance the integration of up to four lasers either for injection level dependent lifetime measurements ranging from ultra low to high injection or extracting depth information by using different laser wavelengths. Bias light facility is included as well as options for μ-PCD or steady state injection conditions. A customer defined calculation with different maps is possible as well as an export of primary data for further evaluation. For standard metrology tasks a predefined standard enables routine measurements by only pushing one button.
Facts
contactless destruction free electrical semiconductor characterisation
μ-PCD measurement option included
mapping capability of carrier lifetime and photoconductivity
advanced sensitivity for visualisation of so far invisible defects and investigations of epitaxial layers
integration of up to four lasers for a wide range of injection levels
access to primary data of single transients as well as maps for special evaluation purposes
Advantages
Topographic visualisation of electrically active defects or material properties at almost any production stage, allows for process optimisation and performance prediction of devices.
Extremely versatile measurement strategies allow special investigations as well as traceability to international standards.
Small compact bench top tool with very high measurement sensitivity facilitates fast routine measurements.
Detail
R&D modus: highly flexible measurement parameter adjustment
operator modus: quick standard measurement options
parameter auto setting
Specifications
sample thickness: 10 μm to 20 mm
sample size: between 5 x 5 mm² up to 16” or 210 x 210 mm²
resistivity range for lifetime measurements: 0.2 - 103 Ohm cm, p/n
material: silicon wafer, epi layers, partially or fully processed wafers, compound semiconductors and beyond
measureable properties: carrier lifetime (steady state or non equilibrium (μ-PCD ) selectable), photoconductivity (steady state)
excitation power: software controlled three orders of magnitude, 980 nm, 2 lasers default
adjustable bias light included
measurement spot: 0.5 mm default, option: software controlled adjustable spot size
measurement time (depending on samples): for instance 1 mm resolution 6” silicon wafer, less than 5 minutes
world wide remote access via LAN
dimension: 680 x 380 x 450 mm, weight: 65 kg
power: 110/220V, 50/60 Hz, 5 A
Options
resistivity map
iron mapping capability
light beam induced current (LBIC) for solar cells
up to four lasers
Case Studies
Iron concentration determination
The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. With the MDPingot tool it is possible to measure the iron concentration in an ingot inline and the laboratory tool MDPmap09 also enables very high resolution maps of the iron concentration.
Injection dependent measurements
The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced. With MDPmap09 it is possible to measure not only injection dependent lifetime curves but also photoconductivity curves over a very wide range of injection.
Trap concentration determination
The method MDP can also be applied to measure injection dependent photoconductivity and lifetime. At low injection the lifetime as well as the excess photoconductivity shows an anomalous increase which can be explained by the effects of trapping centers. With MDPmap09 it is possible to measure injection dependent lifetime curves and to determine the trap density and activation energy.
Passivation homogeneity
For many applications samples may exhibit a passivated surface. With MDPmap09 it is possible to investigate the quality and homogeneity of the passivation with a high resolution.
Lifetime determination of epitaxial silicon thin-film layers
The method MDP enables to determine the minority carrier lifetime of crystalline silicon thin-film material, deposited as epitaxial layers down to a thickness of about 10 µm. The measurement is contact less and non-destructive. The investigations provide information about the electrical quality of the layer and the deposition process. Even the analysis of the interface recombination velocity should be possible.
Media
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Lifetime map of passivated multicrystalline silicon
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(78.4 kB, 175x159) -
Iron contamination map of multicrystalline silicon
download
(85.1 kB, 176x159) -
Bor oxygen map of mono silicon
download
(62.3 kB, 176x159) -
Trap density map of mono silicon
download
(73.3 kB, 176x159) -
mdpmap 2011-03-21
download
(452.2 kB, 1000x900)
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Freiberg Instruments GmbH | Am St. Niclas Schacht 13 | D-09599 Freiberg/Germany || t +49 3731 41954 0 | f +49 3731 41954 14 || contact | how to find us || creation: 599media GmbH