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Offline tool for very versatile contactless electrical characterisation of semiconductor wafers or partially processed wafers. Ideal for efficient routine measurements as well as for sophisticated R&D applications.
MDP map - flexible mapping tool for R&D or production monitoring
MDP map is designed as a small compact bench top contactless electrical characterisation tool for offline production control or R&D, measuring parameters like minority carrier lifetime, photoconductivity, resistivity and defect informations over a wide injection range in steady state or short pulse excitation (µ-PCD). Automated sample recognition and parameter setup allow for easy addaption to a fast variety of different samples under many preparation stages ranging from bare wafers to almost completely metallised ones.
MDP map has a high flexibility from a physical point of view which allows for instance for the integration of up to four lasers either for injection level dependent lifetime measurements ranging from ultra low to high injection or extracting depth informations by using different laser wavelength. Bias laser are included as well as options for µ-PCD or steady state injection conditions. A customer defined calculation with different topogramms is possible as well as an export of raw data for further evaluation. For standard metrology tasks a predefined standard allows for routine measurements by only pushing one button on the tool. Setup can be achieved within minutes from anyone without any experience.
Facts
contactless destruction free electrical semiconductor characterisation
μ-PCD measurement option included
mapping capability of: minority carrier lifetime, photoconductivity
advanced sensitivity for visualisation of so far invisible defects
access to raw data, transients as well as maps
Detail
F&E modus: highly flexible measurement parameter adjustment
operator modus: quick standard measurement options
parameter autosetting
Samples
sample thickness: 10 μm to 20 mm
- sample size: anything between 5 x 5 mm² up to 16” or 210 x 210 mm²
resistivity: 0,1 - 10³ Ohm cm
conduction type: p, n
material: silicon wafer, epi layers, partially or fully processed wafers, compound semiconductors
properties measureable: lifetime (steady state or non equilibrium(μ-PCD) selectable),
photoconductivity (steady state)
excitation power: software controlled four orders of magnitude, 980 nm, 2 lasers default
adjustable bias light included
measurement spot 0.5 mm default, option: software controlled adjustable spot size.
measurement time depending on samples: for instance 1 mm resolution 6” silicon wafer, less than 5 minutes
remote access via lan
options
resistivity map
iron mapping capability
Light beam induced current (LBIC)
Up to four lasers
Case Studies
Iron concentration determination
The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. With the MDPingot tool it is possible to measure the iron concentration in an ingot inline and the laboratory tool MDPmap09 also enables very high resolution maps of the iron concentration.
Injection dependent measurements
The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced. With MDPmap09 it is possible to measure not only injection dependent lifetime curves but also photoconductivity curves over a very wide range of injection.
Trap concentration determination
The method MDP can also be applied to measure injection dependent photoconductivity and lifetime. At low injection the lifetime as well as the excess photoconductivity shows an anomalous increase which can be explained by the effects of trapping centers. With MDPmap09 it is possible to measure injection dependent lifetime curves and to determine the trap density and activation energy.
Passivation homogeneity
For many applications samples may exhibit a passivated surface. With MDPmap09 it is possible to investigate the quality and homogeneity of the passivation with a high resolution.
Lifetime determination of epitaxial silicon thin-film layers
The method MDP enables to determine the minority carrier lifetime of crystalline silicon thin-film material, deposited as epitaxial layers down to a thickness of about 10 µm. The measurement is contact less and non-destructive. The investigations provide information about the electrical quality of the layer and the deposition process. Even the analysis of the interface recombination velocity should be possible.
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