contactless destruction free electrical semiconductor characterisation

bench top based single spot ­measurement

measurement of: carrier lifetime, ­resistivity (option)

advanced sensitivity for visualisation of so far invisible defects

fast manual material and process ­quality control

designed for wafer up to brick characterisation

Table top unit for single point measurements of carrier lifetime, multi- or mono-crystalline silicon at different preparation stages, from as- grown up to final devices.

Small size, low cost and easy to use. Comes with a basic software for result visualisation on a small PC or notebook.

Suitable for wafers up to bricks, with easy to handle height adjustment.

allows for single wafer investigation

different recipes for different wafer classes

monitoring of material , process quality and stability

mono or multi silicon wafers, bricks, cells, wafers after ­different processing steps like passivation or diffusion

sample size: above 50 x 50 mm² up to 12“ or 210x210 mm²

resistivity: 0.2 - 10³ Ohm cm

material: silicon wafers, bricks, partially or fully processed wafers, compound semiconductors and beyond

measurable properties: carrier lifetime

dimension: 360 x 360 x 520 mm, weight: 16 kg

power: 110/220 V, 50/60 Hz, 3 A