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MDP microwave detected photoconductivity

is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab applications. It measures electrical parameters like minority carrier lifetime, photoconductivity and resistivity contactless and destruction free.

The advanced method MDP is well suited for both, defect investigation by e.g. injection dependent minority carrier lifetime measurements, as well as mapping of wafers or even ingots for inline metrology. MDP has a variety of advantages in sensitivity, speed and resolution.

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MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. This allows to do a spatial resolved defect characterization.

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Overview

The performance of semiconductor devices depends fundamentally on key electrical parameters of the material and therefore also on defect densities and their electrical properties.

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Besides MDP the two most important contact less lifetime measuring methods are QSSPC (quasi steady state photoconductivity) and µ-PCD (microwave detected photoconductive decay).

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Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction  free with our method MDP (microwave detected photoconductivity).

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Publications

A close connection between production and research is important for the development of new applications and technologies. So far a few topics were published.

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To gain a better understanding of lifetime measurements and to achieve a better comparability between different measuring methods, it is necessary to perform simulations.

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