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Electrical|Characterization
The performance of semiconductor devices depends fundamentally on key electrical parameters of the material and therefore also on defect densities and their electrical properties.
Electrical characterization – important material parameters
The performance of semiconductor devices depends fundamentally on key electrical parameters of the material and therefore also on defect densities and their electrical properties. With the development of the novel method MDP (microwave detected photoconductivity) it is possible to measure these very important electrical parameters with so far not achieved sensitivity, resolution and speed.
The minority carrier lifetime is one of the most important and significant material parameters. It is extremely sensitive to smallest amounts of impurities or intrinsic defects.
The mobility is a quantity relating to the drift velocity of electrons or holes in an applied electric field across a material. The mobility depends on different processes that can decelerate the free carriers.
When light of sufficient energy is absorbed by a semiconductor, the number of free electrons and holes changes and raises the electrical conductivity of the semiconductor.
The diffusion length is the average distance, that the excess carriers can cover before they recombine.
The electrical resistivity directly depends on the doping concentration of the semiconductor and is therefore a useful parameter to control doping profiles and homogeneity.
The properties of a defect and its impact on the material quality can be described by three main parameters: defect concentration NT, capture cross sections for electrons and holes σn, σp and activation energy ET.
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