Mobility

: mobility for electrons and holes versus injection for different doping concentrations

The mobility is a quantity relating to the drift velocity of electrons or holes in an applied electric field across a material. The mobility depends on different processes that can decelerate the free carriers, like collisions with the lattice or scattering at crystal defects and impurities.

$\frac{1}{\mu}=\frac{1}{\mu_{lattice}}+\frac{1}{\mu_{impurities}}$

Hence the mobility depends on the doping concentration, defect concentration and injection. In our simulations and measurements we apply the model of DORKEL and LETURQUE[1].

[1] J. M. Dorkel and P. Leturcq, Solid-State Electronics 24, 821-825 (1981)