Materials

Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction with our novel method MDP. MDP is a contact less and destruction free method, so that no sample preparation is needed. The only exception is that for investigations of the bulk properties of for example silicon samples a surface passivation is preferred.

There are no restrictions on the sample shape or size starting with nano material powders up to 12" wafers.

Seemingly all semiconductors on the market can be investigated. Starting with a variety of electronic grade- and multicrystalline silicon. Due do the high sensitivity even the quality of a large variety of thin epitaxial layers and strained silicon can be characterized. Investigation has been carried out on GaAs, InP, SiC, GaN, Ge and other compound semiconductors. The list is constantly expanding. So far few limitations are known.