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Discover the| magic behind!A close connection between production and research is important for the development of new applications and technologies. So far a few topics were published.
K. Dornich, N. Schüler, D. Mittelstraß, A. Krause, B. Gründig-Wendrock, K. Niemietz and J.R. Niklas:
New spatial resolved inline metrology on multicrystalline silicon for PV
(To be published in proceedings of 24th EU PVSEC)
N. Schüler, T. Hahn, K. Dornich, J.R. Niklas, B. Gründig Wendrock:
Theoretical and experimental comparison of contact less lifetime measurement methods at thick silicon samples
(To be published in Solar Energy Materials and Solar Cells)
N. Schüler, T. Hahn, K. Dornich, J.R. Niklas:
Versatile simulation tool and novel measurement method for electrical characterization of semiconductors
(to be published in Solid State Phenomena)
S. Schmerler, T. Hahn, S. Hahn, J.R. Niklas, B. Gründig Wendrock:
Explanation of positive and negative PICTS peaks in SI-GaAs
J. Mater Sci: Mater Electron
T. Hahn, S. Schmerler, S. Hahn, J.R. Niklas:
Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations
J. Mater Sci: Mater Electron (2008) 19:S79-S82
K. Niemietz, K. Dornich, M. Gosh, A. Müller, J.R. Niklas
Contactless investigation of electrical properties and defect spectroscopy of mc-Si at low injection level
21st European Photovoltaic Solar Energy Conference, p. 361-364
K. Dornich, K. Niemietz, Mt. Wagner, J.R. Niklas
Contact less electrical defect characterisation of silicon by MD-PICTS
Material Science in Semiconductor Processing, Elsevier, 241-245
S. Hahn, K. Dornich, T. Hahn, A. Köhler, J.R. Niklas, P. Schwesig, G. Müller
Contact free defect investigation of wafer annealed SI InP
Material Science in Semiconductor Processing 9, Elsevier, 355-358
K. Dornich, T.Hahn, J.R. Niklas
Non destructive electrical defect characterisation and topography of silicon wafers and epitaxial layers
Mater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS
S. Hahn, T. Hahn, K. Dornich, B. Gruendig - Wendrock, J.R. Niklas, P. Schwesig, G. Müller
Contact free defect investigation in as grown Fe doped SI - InP
Mater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS
20.06.10
35th IEEE Photovoltaic specialists...
17.06.10
Freiberg Instruments wins IQ innovation...
05.05.10
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