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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Free radical measurements in life science and biomedical applications
Offline tool for very versatile contactless electrical characterization of semiconductor wafers or partially processed wafers....
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished.
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
benchtop PID test solution
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The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
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for ultra-fast crystal orientation and rocking curve measurements
flexible diffractometer for ultra-fast Omega Scan orientation determination
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discover the most convenient way of measuring orientation of single crystals
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To gain a better understanding of lifetime measurements and to achieve a better comparability between different measuring methods, it is necessary to perform simulations.
This numerical tool is based on a generalized rate equation system, which is solved for all possible transitions between the defect levels in the forbidden gap and the bands of a semiconductor. The only approximation is, that no interactions between defect levels are included. This is a valid approximation, since the defect density in silicon is typically low.
The applied rate equation system describes the time dependent change of carrier concentrations in the conduction and valence band, as well as in defect levels. In this equation system the optical and thermal generation rates, the band to band and Auger recombination rates and the carrier capture and emission rates from all defects (Cj, Dj, Ej, Fj) are included. The transition rates are described without any approximations.
From the simulated time dependent carrier concentrations the photoconductivity can be calculated using the mobility model of DORKEL and LETURCQ  . The minority carrier lifetime can be extracted from the transient of the photoconductivity after Gopt is set to zero.
advantages compared to SRH simulations or PC1D
lifetime is not a parameter, but a direct result
non steady state can be simulated as well
an arbitrary number j of defect levels can be included
The numerical simulation tool is suited for simulation of injection and temperature dependent measurements, for investigating the trapping effect on lifetime and photoconductivity and for the comparison of MDP and µPCD or other measurement conditions. Summarizing, this simulation tool enables to make lifetime measurements more comparable and to achieve a better understanding of the results.
More information about these simulations can be found in:
 T. Hahn, Thesis, TU Bergakademie, 2009
 J. M. Dorkel and P. Leturcq, Solid-State Electronics 24, 821-825 (1981)