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Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
benchtop PID test for solar wafers and mini-modules
portable in field PID tester for solar modules
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The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
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For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
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discover the most convenient way of measuring orientation of single crystals
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The Quality of the dielectric surface passivation is gaining in importance especially in photovoltaics. Because of novel solar cell concepts as PERC or IBC solar cells and the growing need for solar cells with high efficiencies a tool for a fast characterization of the passivation layers is needed. The MDPmap together with the BiasMDP option satisfies this need.
Dielectric surface passivation layers are producing a chemical and a field effect passivation. These both mechanism can be described via the parameters Dit (density of interface traps) and Qfix (density of fixed charges), which can both be determined with the BiasMDP. A bias voltage is applied, which compensates the fixed charges and ultimately leads to a strong inversion. The minority carrier lifetime is measured for different bias voltages and a lifetime curve as shown in figure 1 results. An explanation for this behavior is given in figure 1. By additionally measuring with a variable injection Qfix and Dit can be determined from this lifetime curve.
First results show a very good correlation between BiasMDP and the standard method C(V). Comparable flat band voltages, also in dependence of different oxide thicknesses were measured.
For more information about BiasMDP please read:
 P. M. Jordan, D. K. Simon, T. Mikolajick, I. Dirnstorfer, Appl. Phys. Lett. 106, 061602 (2015)