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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Free radical measurements in life science and biomedical applications
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
benchtop PID test for solar wafers and mini-modules
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
The microelectronic industry drives present global technological developments. It is one reason for the success of information...
Solar Energy is one of the key elements for the energy revolution that is currently taking place all over the world. In the last...
Research and development is the driving force for the expanding market for semiconductor products in the PV and microelectronic...
The impact of the development of the crystal growth methods on modern technology is often underestimated. We use products...
Freiberg Instruments is one of the world's fast growing, young and dynamic analytical instrumentation companies
Technical support, Training, Warranty, Consultation, Seminars, Upgrades and more
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
going the extra mile
at Freiberg Instruments
A close connection between production and research is important for the development of new applications and technologies. So far a few topics were published.
Paul M. Jordan, Daniel K. Simon, Franz P.G. Fengler, Thomas Mikolajick, and Ingo Dirnstorfer2D Mapping of Chemical and Field Effect Passivation of Al2O3 on Si Substrates
Paul M. Jordan, Daniel K. Simon, Thomas Mikolajick, and Ingo DirnstorferBiasMDP: Carrier lifetime characterization technique with applied bias voltage
N. Schüler, B. Berger, A. Blum, K. Dornich, J.R. Niklas High Resolution Inline Topography of Iron in P-doped Mutlicrystalline Bricks by MDP
K. Dornich, N. Schüler, J.R. Niklas Injection dependent lifetime spectroscopy with a varying pulse length
K. Dornich, N. Schüler, B. Berger, J.R. Niklas Fast, high resolution, inline contactless electrical semiconductor characterization for photovoltaic applications by MDP
Bastian Berger, Nadine Schüler, Sabrina Anger, Bianca Gründig-Wendrock, Jürgen R. Niklas, Kay DornichContactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP)
N. Schüler, T. Hahn, K. Dornich and J.R. Niklas:Spatially resolved determination of trapping parameters in P-doped silicon by microwave detected photoconductivity25th EUPVSEC Valencia, Spain
N. Schüler, D. Mittelstrass, K. Dornich and J.R. Niklas:High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements35th IEEE Photovoltaic Specialists conference, Honolulu Hawaii
N. Schüler, D. Mittelstrass, K. Dornich, J.R. Niklas and H. Neuhaus:Next generation inline minority carrier lifetime metrology on multicrystalline silicon bricks for pv35th IEEE Photovoltaic Specialists conference, Honolulu Hawaii
N. Schüler, T. Hahn, K. Dornich, J.R. Niklas:Versatile simulation tool and novel measurement method for electrical characterization of semiconductorsSolid State Phenomena 156-158, 241-246 (2010)
N. Schüler, T. Hahn, S. Schmerler, S. Hahn, K. Dornich and J.R. Niklas:Simulations of photoconductivity and lifetime for steady state and nonsteady state measurementsJournal of Applied Physics 107 (2010), 064901
N. Schüler, T. Hahn, K. Dornich, J.R. Niklas, B. Gründig-Wendrock:Theoretical and experimental comparison of contactless lifetime measurement methods for thick silicon samplesSolar Energy Materials & Solar Cells 94 (2010), 1076-1080
K. Dornich, N. Schüler, D. Mittelstraß, A. Krause, B. Gründig-Wendrock, K. Niemietz and J.R. Niklas:New spatial resolved inline metrology on multicrystalline silicon for PV(To be published in proceedings of 24th EU PVSEC)
S. Schmerler, T. Hahn, S. Hahn, J.R. Niklas, B. Gründig Wendrock:Explanation of positive and negative PICTS peaks in SI-GaAsJ. Mater Sci: Mater Electron
T. Hahn, S. Schmerler, S. Hahn, J.R. Niklas:Interpretation of lifetime and defect spectroscopy measurements by generalized rate equationsJ. Mater Sci: Mater Electron (2008) 19:S79-S82
K. Niemietz, K. Dornich, M. Gosh, A. Müller, J.R. NiklasContactless investigation of electrical properties and defect spectroscopy of mc-Si at low injection level21st European Photovoltaic Solar Energy Conference, p. 361-364
K. Dornich, K. Niemietz, Mt. Wagner, J.R. NiklasContact less electrical defect characterisation of silicon by MD-PICTSMaterial Science in Semiconductor Processing, Elsevier, 241-245
S. Hahn, Franziska Christine Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J.R. Niklas, Erik JanzénContact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material Mater. Sci. Forum 600-603, 405 (2009).
S. Hahn, K. Dornich, T. Hahn, A. Köhler, J.R. Niklas, P. Schwesig, G. Müller
Contact free defect investigation of wafer annealed SI InPMaterial Science in Semiconductor Processing 9, Elsevier, 355-358
K. Dornich, T.Hahn, J.R. NiklasNon destructive electrical defect characterisation and topography of silicon wafers and epitaxial layersMater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS
S. Hahn, T. Hahn, K. Dornich, B. Gruendig - Wendrock, J.R. Niklas, P. Schwesig, G. MüllerContact free defect investigation in as grown Fe doped SI - InPMater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS