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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Free radical measurements in life science and biomedical applications
Offline tool for very versatile contactless electrical characterization of semiconductor wafers or partially processed wafers....
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished.
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
benchtop PID test solution
for fast and routine production level quality control of solar cells
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
for ultra-fast crystal orientation and rocking curve measurements
flexible diffractometer for ultra-fast Omega Scan orientation determination
for AT, SC, FC, IT cut Blanks
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
The microelectronic industry drives present global technological developments. It is one reason for the success of information...
Solar Energy is one of the key elements for the energy revolution that is currently taking place all over the world. In the last...
Research and development is the driving force for the expanding market for semiconductor products in the PV and microelectronic...
The impact of the development of the crystal growth methods on modern technology is often underestimated. We use products...
Freiberg Instruments is one of the world's fast growing, young and dynamic analytical instrumentation companies
Technical support, Training, Warranty, Consultation, Seminars, Upgrades and more
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
going the extra mile
at Freiberg Instruments
according to IEC 62804 standard
Potential induced degradation (PID) is a serious reliability problem in PV power plants. Hence it is important to investigate its products on their PID susceptibility. The aim of the PIDcon is to enable the producers to test their products as early as possible in the production chain as well as investigate the encapsulation materials.
The PIDcon allows routine quality control of standard production cells, test of new processes, material or layer variations and qualification for various module steps. Note that the PID that is considered here is the shunting of the solar cells due to high voltage stress induced leakage currents (PID-s).
The construction of the PIDcon is practical identical to the IEC standard (fig.1) .The sample stack (solar cell, EVA foil and glass) is imitating a solar modul. With this test method it is possible to test the solar cell and the encapsulation material. Figure 2 shows a typical PIDcon measurement of a PID prone solar cell.
The PIDcon has the following advantages compared to conventional PID tests on modules:
No climate chamber necessary
Measurement early in the production chain
Designed for research work as wells as routine production quality control
Short test duration, typically between 4 and 8 hours
Measurement and recording of shunt resistance and deduction of estimated power loss