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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Free radical measurements in life science and biomedical applications
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
benchtop PID test for solar wafers and mini-modules
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
The microelectronic industry drives present global technological developments. It is one reason for the success of information...
Solar Energy is one of the key elements for the energy revolution that is currently taking place all over the world. In the last...
Research and development is the driving force for the expanding market for semiconductor products in the PV and microelectronic...
The impact of the development of the crystal growth methods on modern technology is often underestimated. We use products...
Freiberg Instruments is one of the world's fast growing, young and dynamic analytical instrumentation companies
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Our quality management system is an integrated process-oriented system with ISO 9001 certification.
going the extra mile
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Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the necessary annealing steps. The difficulties so far were that the implanted area is usually at a depth of only several µm and that the implanted doses are very low. MDP enables to characterize these implanted samples with a high resolution and a good differentiation between different implanted doses.
In this case not the lifetime, but the photoconductivity or signal height is the most sensitive parameter for detecting inhomogeneity in implantations. It depends strongly on the resistivity and the lifetime itself.
In the MDPmap and MDPingot equipment it is possible to integrate up to 4 lasers with different wavelength. Furthermore it is possible to measure with different pulse length from a very short pulse of only 100 ns, where no carrier diffusion takes place to a pulse length of several ms, where the carriers diffuse into the sample depth. Hence by varying the laser wavelength and the pulse length, it is possible to measure with different penetration.
In this case a 660 nm laser with a pulse length of 100 ns was chosen; hence a penetration depth of approximately 4 µs was achieved. Figure 1 shows the implanted P doses in the measured Cz-Si sample and figure 2 demonstrates how the different doses can be distinguished by photoconductivity measurements.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different preparation stages, without built-in automatization. Optional hand operated z-axis for thicker samples up to 156 mm bricks....