Offline tool for very versatile contact­less electrical characterization of semi­conductor wafers or partially processed wafers. Ideal for efficient routine measurements as well as for sophisticated R&D applications.

Flexible mapping tool for R&D or production monitoring

MDPmap is designed as a compact bench top contactless electrical characterization tool for offline production control or R&D, measuring parameters like carrier lifetime, photoconductivity, resistivity and defect information over a wide injection range in steady state or short pulse excitation (μ-PCD). Automated sample recognition and parameter setup allows an easy adaption to a big variety of different samples comprising epitaxial layers and wafers after various preparation stages ranging from as-grown wafers to up to 95% metallized ones.

The major advantage of MDPmap is its high flexibility, which allows for instance the integration of up to four lasers either for injection level dependent lifetime measurements ranging from ultra low to high injection or extracting depth information by using different laser wavelengths. Bias light facility is included as well as options for μ-PCD or steady state injection conditions. A customer defined calculation with different maps is possible as well as an export of primary data for further evaluation. For standard metrology tasks a predefined standard enables routine measurements by only pushing one button.


  • contactless destruction free electrical semiconductor characterisation

  • μ-PCD measurement option included

  • advanced sensitivity for visualisation of so far invisible defects and investigations of epitaxial layers

  • integration of up to four lasers for a wide range of injection levels

  • access to primary data of single transients as well as maps for special evaluation purposes

Add ons

  • Spot size variation

  • Resistivity measurement (wafers)

  • Background/Bias light

  • Reflection measurement (MDP)

  • LBIC

  • BiasMDP

  • Reference wafer

  • Resistivity calibration set (wafers)

  • Internal/External iron mapping of Si

  • Integrated heating stage

  • Additional lasers

Contact us for more information.


  • Topographic visualisation of electrically active defects or material properties at almost any production stage, allows for process optimisation and performance prediction of devices.

  • Extremely versatile measurement strategies allow special investigations as well as traceability to international standards.

  • Small compact bench top tool with very high measurement sensitivity facilitates fast routine measurements.

Lifetime map of passivated multicrystalline silicon
Iron contamination map of multicrystalline silicon
Bor oxygen map of mono silicon
Trap density map of mono silicon

Technical specifications

sample thickness10 μm to 20 mm
sample sizebetween 5 x 5 mm² up to 16” or 210 x 210 mm²
resistivity range for lifetime measurements0.2 - 104 Ohm cm, p/n
materialsilicon wafer, epi layers, partially or fully processed wafers, compound semiconductors and beyond
measureable propertiescarrier lifetime (steady state or non equilibrium (μ-PCD ) selectable), photoconductivity (steady state)
excitation powersoftware controlled three orders of magnitude, 980 nm, 2 lasers default
includedadjustable bias light
measurement spot0.5 mm default, option: software controlled adjustable spot size
measurement time (depending on samples)for instance 1 mm resolution 6” silicon wafer, less than 5 minutes
world wide remote access via LAN
dimension680 x 380 x 450 mm, weight: 65 kg
power110/220V, 50/60 Hz, 5 A


  • R&D modus: highly flexible measurement parameter adjustment

  • operator modus: quick standard measurement options

  • parameter auto setting


  • resistivity map

  • iron mapping capability

  • light beam induced current (LBIC) for solar cells

  • up to four lasers