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Advanced R&D – destruction free, flexible and fast

  • Highly sensitive due to advanced microwave system

  • Customized laser and optic integration for all your materials

  • Simultaneous resistivity measurement and other options

Materials

The MDPmap features a versatile selection of advanced lasers, enabling comprehensive electrical characterization for nearly all types of semiconductors.

Si SiC Ge GaAs Ga₂O₃ InP Diamond and more

Features & Benefits

355–1550 nm

Available wavelengths

10 ns

Time resolution

> 99 %

repeatability

Resistivity
0.3–5

Ohm cm

Resistivity
0.3–5

Ohm cm

  • Sensitivity: highest sensitivity for visualization of so far invisible defects and investigations of epitaxial layers

  • Measurement speed: < 5 minutes for a 6 inch Si wafer, 1 mm resolution

  • Range of lifetimes: 20 ns to several ms

  • Contamination determination: metal (Fe) contaminations originated in crucibles and equipment

  • Measurement capability: from as-cut wafers to fully processed samples

  • Flexibility: fixed measurement head allows coupling of external lasers with trigger

  • Reliability: modular and compact bench top instrument for higher reliability and uptime > 99%

  • Repeatability: > 99%

  • Resistivity: resistivity mapping without frequent calibration


Flexible mapping tool for R&D or production monitoring

MDPmap is designed as a compact bench top contactless electrical characterization tool for offline production control or R&D, measuring parameters like carrier lifetime, photoconductivity, resistivity and defect information over a wide injection range in steady state or short pulse excitation (μ-PCD). Automated sample recognition and parameter setup allows an easy adaption to a big variety of different samples comprising epitaxial layers and wafers after various preparation stages ranging from as-grown wafers to up to 95% metallized ones.

The major advantage of MDPmap is its high flexibility, which allows for instance the integration of up to four lasers either for injection level dependent lifetime measurements ranging from ultra low to high injection or extracting depth information by using different laser wavelengths. Bias light facility is included as well as options for μ-PCD or steady state injection conditions. A customer defined calculation with different maps is possible as well as an export of primary data for further evaluation. For standard metrology tasks a predefined standard enables routine measurements by only pushing one button.

Applications


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Technical specifications

sample sizeup to 300 mm diameter (standard), up to 450 mm diameter (on request), down to 5 x 5 mm
range of lifetimes20 ns to several ms
resistivity0.2 - >103 Ohm cm, p/n
materialsilicon wafer, epi layers, partially or fully processed wafers, compound semiconductors and beyond
measureable propertieslifetime - μ-PCD/MDP (QSS), photoconductivity
excitationselect up to four different wavelengths from 355 nm up to 1480 nm. 980 nm (default)
dimensions680 x 380 x 450 mm, weight: ca. 65 kg
power100 - 250V, 50/60 Hz, 5 A

Technologies


Accessories & Options

Our devices offer versatile configuration options to meet specific requirements effectively. Each model can be customized to ensure maximum flexibility and efficiency.

Contact for more information

  • Spot size variation

  • Resistivity measurement (wafers)

  • Sheet resistance

  • Background/Bias light

  • Reflection measurement (MDP)

  • LBIC for solar cells

  • Reference wafer

  • Internal/External iron mapping of Si

  • Integrated heating stage

  • Wide range of lasers

Get in touch

Do not hesitate to contact us – we are available to assist you with any inquiries or requests.

Use our inquiry tool or reach out via email:
sales@freiberginstruments.com