In contrast to other techniques MD-PICTS (microwave detected photo induced current transient spectroscopy) can detect signals even from thin surface regions (3 µm) of SI GaAs samples and is therefore able to analyze e.g. influence of surface treatments. Figure 1 shows the defect peak of the well-known EL2 defect in samples with different acceptor concentrations.
Fig. 1: Detection of the EL2 defect in SI GaAs samples with different acceptor concentrations by MD-PICTS, peak height and sign correlate to the acceptor concentration
Related Solutions and Industries: Epitaxial Layers & Thin Films
