Skip menu

Enables fast and easy assessment of the lifetime at a single point

  • Single point measurement

  • Wafers and ingots

  • Flexible low cost tool

Materials

Discover unparalleled ease and speed in lifetime characterization of almost all semiconductors with MDPspot, designed to streamline your workflow without compromising accuracy.

Si SiC Ge GaN GaAs InP and more

Features & Benefits

355–1550 nm

Available wavelengths

10 ns

Time resolution

> 99 %

repeatability

Flexible
measurement

For wafers and ingots

Flexible
measurement

For wafers and ingots

  • contactless destruction free electrical semiconductor characterisation

  • μ-PCD measurement option included

  • advanced sensitivity for visualisation of so far invisible defects and investigations of epitaxial layers

  • integration of up to four lasers for a wide range of injection levels

  • access to primary data of single transients as well as maps for special evaluation purposes

  • allows for single wafer investigation

  • different recipes for different wafer classes

  • monitoring of material, process quality and stability


Table top single spot measurements

The MDPspot is an affordable and compact solution for lifetime characterization of various semiconductors across different preparation stages. Designed without built-in automation, it offers flexibility for diverse applications.

  • Cost-Effective Design: A budget-friendly option for reliable lifetime measurements.

  • Versatile Compatibility: Suitable for a range of semiconductors samples, from thin wafers to thicker materials up to 156 mm bricks.

  • Optional Z-Axis Adjustment: A hand-operated z-axis is available for precise handling of thicker samples.

  • Intuitive Software: Standard software included for clear visualization and analysis of results.

Streamline your measurement processes with this efficient and easy-to-use system.

 

Applications


Interested? Our experts are happy to assist you.

Get in touch!

Contact us now!

Technical specifications

 mono or multi silicon wafers, bricks, cells, wafers after ­different processing steps like passivation or diffusion
sample sizeabove 50 x 50 mm² up to 12“ or 210 x 210 mm²
resistivity0.2 - 10³ Ohm cm
materialsilicon wafers, bricks, partially or fully processed wafers, compound semiconductors and beyond
measureable propertiescarrier lifetime
dimension360 x 360 x 520 mm, weight: 16 kg
power110/220 V, 50/60 Hz, 3 A

 

Technologies


Accessories & Options

Our devices offer versatile configuration options to meet specific requirements effectively. Each model can be customized to ensure maximum flexibility and efficiency.

Contact for more information

  • Spot size variation

  • Resistivity measurement (wafers)

  • Background/Bias light

  • Reflection measurement (MDP)

  • Software extension

  • Additional lasers

Get in touch

Do not hesitate to contact us – we are available to assist you with any inquiries or requests.

Use our inquiry tool or reach out via email:
sales@freiberginstruments.com