MD-PICTS - 微波检测光诱导电流瞬态光谱仪
MD-PICTS 是 MDP 的改进版本，它能够对瞬态响应中的缺陷部分进行温度依赖性测量。这使得能够对缺陷进行空间分辨的表征。 与深能级瞬态光谱（DLTS）类似，该方法可测定缺陷的活化能和捕获截面。但与DLTS不同的是，该方法无需接触。这对缺陷识别和材料质量提升具有极高的价值。
Fig. 1: example of a MD-PICTS spectrum of different tempered Cz—Si wafers
如需进一步了解该方法，请参阅：
B. Grundig-Wendrock, M. Jurisch, and J. R. Niklas, Materials Science and Engineering B-Solid State Materials for Advanced Technology 91, 371-375 (2002)
S. Hahn, F. Beyer, A. Gällström, P. Carlsson, A. Henry, B. Magnusson, J. R. Niklas, and E. Janzen, Materials Science Forum 600-603, 405-408 (2009)
K. Dornich, K. Niemietz, Mt. Wagner, J.R. Niklas, Material Science in Semiconductor Processing, Elsevier, 241-245
Bastian Berger, Nadine Schüler, Sabrina Anger, Bianca Gründig-Wendrock, Jürgen R. Niklas, Kay Dornich, Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP)
