Electrical and optical characterization using SPV/Kelvin

• Photocarrier generation and separation mechanisms

• Minority carrier lifetime measurement/Diffusion length calculations

• Trapped carrier dynamics, time resolved

• Surface Photovoltage measurements

Figure 1 shows an example using SPV for the characterization of the polishing process on the double-side polished high-resistivity float zone silicon wafer. The red areas in the plots clearly show that the CMP polishing process is not optimal and even signatures of a handling tool are clearly visible in the plots (left below).