SPV-Picts SPV temperature dependence measurements

Use this option to make SPV measurements at different temperatures between room temperature and 200°C. Temperature-dependent SPV measurements can be applied to measure activation energies or to investigate temperature dependent reactions/processes in situ. As an example heeling or introduction of defects at surfaces or in the bulk can be investigated in this way.

For wide-bandgap semiconductors the onset energy of the SPV signal associated with the bandgap edge is normally not sharp and well defined. By varying the temperature, the onset energy can be measured at different temperatures, resulting in a better estimation of the bandgap edge energies.

Some photocatalytic materials have engineered defect states that accelerate the separation of charges. In a high-volume production setup of photocatalytic materials with engineered defect states, the control plan for the activity of the defect states is critical-to-yield. By varying the temperature over a relatively narrow range (say 10°C), the activity can be efficiently tested.

Furthermore, the photocatalyst material need to work over broad range of temperatures. This makes the SPV-Picts option almost indispensable for any research programme aiming to develop efficient photocatalytic materials.