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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.
With MDPmap it is possible to measure not only injection dependent lifetime curves but also photoconductivity curves over a very wide range of injection.
In the MDPmap and MDPingot up to 4 different lasers can be integrated and hence it is possible to measure not only injection dependent lifetime curves but also photoconductivity curves over a very wide range of injection. Figure 1 displays a comparison of the typical injection range of different known lifetime measuring methods. Because of its extraordinary sensitivity the MDPmap and MDPingot are able to measure over seven decades of injection. Due to bias light and reflection measurements a very good accuracy could be improved profoundly.
With MDPmap the whole important injection range can be covered with just one method as demonstrated in figure 2 for 2 different spots on a SiNx passivated mc-Si wafer. Until now it was necessary to use several different methods, which often cannot be compared to each other. With MDP an easy excess to the important injection dependent lifetime curves is possible.
For further information please read:
 S. Rein, Lifetime Spectroscopy - A Method of Defect Characterization in Silicon for Photovoltaic Applications, Vol. 85 (Springer, Berlin Heidelberg, 2005)
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different preparation stages, without built-in automatization. Optional hand operated z-axis for thicker samples up to 156 mm bricks....