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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
for ultra-fast crystal orientation, crystal alignment in production, quality control, rocking curve measurements, material...
state-of-the-art XRD system for automatic single crystal ingot orientation, tilting and alignment for grinding
Wafer sorting, crystal orientation, resistivity, optical notch and flat determination
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
for contactless and temperature dependent lifetime and LBIC measurements
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
Equipped with a 355 nm laser (μ-PCD) or a 375 nm laser diode (MDP), the MDPmap as well as the MDpicts from Freiberg Instruments are suitable for photoconductivity measurements and trap analysis on wide-bandgap nitride semiconductors. The homogeneity of n-type doping can be analyzed by means of the photoconductivity (signal height). It is strongly dependent on the resistivity and the carrier lifetime.
The usually long apparent lifetimes are caused by trapping centers in the samples. Deep traps in wide-bandgap semiconductors can be investigated by MDpicts in the temperature range from 30 K up to 800 K. Compared to related methods (e.g. DLTS), MDpicts is a contactless and nondestructive method which also allows the investigation of highly n-doped semiconductors. The trap activation energy can be determined from the slope of the Arrhenius plot or estimated by directly fitting the lifetime reduction as a function of temperature by τ(T)= τ0/((1+aexp-EA/kT)). From the value of EA ~ 1.0 eV the main defect in the unintentionally doped GaN sample (see Figure 2 left) can be assumed to be CN.