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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction free with our advanced method MDP.
Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction with our advanced method MDP. MDP is a contact less and destruction free method, so that no sample preparation is needed. The only exception is that for investigations of the bulk properties of for example silicon samples a surface passivation is preferred.
There are no restrictions on the sample shape or size starting with nano material powders up to 12" wafers.
Apparently all semiconductors on the market can be investigated. Starting with a variety of electronic grade- and multicrystalline silicon. Due do the high sensitivity even the quality of thin epitaxial layers and strained silicon can be characterized. Investigations have been carried out on GaAs, InP, SiC, GaN, Ge and other compound semiconductors. The list is constantly expanding. So far few limitations are known.