MD-PICTS – microwave detected photo induced current transient spectroscopy
MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. This allows for a spatially resolved defect characterization. Similar to DLTS (deep level transient spectroscopy), the activation energy and the capture cross section of the defects can be determined. However, in contrast to DLTS, no contacts are needed. This is extremly valuable for defect identification and material quality improvement.
Fig. 1: example of a MD-PICTS spectrum of different tempered Cz—Si wafers
If you want to learn more about this method read:
B. Grundig-Wendrock, M. Jurisch, and J. R. Niklas, Materials Science and Engineering B-Solid State Materials for Advanced Technology 91, 371-375 (2002)
S. Hahn, F. Beyer, A. Gällström, P. Carlsson, A. Henry, B. Magnusson, J. R. Niklas, and E. Janzen, Materials Science Forum 600-603, 405-408 (2009)
K. Dornich, K. Niemietz, Mt. Wagner, J.R. Niklas, Material Science in Semiconductor Processing, Elsevier, 241-245
Bastian Berger, Nadine Schüler, Sabrina Anger, Bianca Gründig-Wendrock, Jürgen R. Niklas, Kay Dornich, Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP)
