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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished.
MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. This allows for a spatially resolved defect characterization. Similar to DLTS (deep level transient spectroscopy), the activation energy and the capture cross section of the defects can be determined. However, in contrast to DLTS, no contacts are needed. This is extremly valuable for defect identification and material quality improvement.
If you want to learn more about this method read:
 B. Grundig-Wendrock, M. Jurisch, and J. R. Niklas, Materials Science and Engineering B-Solid State Materials for Advanced Technology 91, 371-375 (2002)
 S. Hahn, F. Beyer, A. Gällström, P. Carlsson, A. Henry, B. Magnusson, J. R. Niklas, and E. Janzen, Materials Science Forum 600-603, 405-408 (2009)
 K. Dornich, K. Niemietz, Mt. Wagner, J.R. Niklas, Material Science in Semiconductor Processing, Elsevier, 241-245
 Bastian Berger, Nadine Schüler, Sabrina Anger, Bianca Gründig-Wendrock, Jürgen R. Niklas, Kay Dornich, Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP)