Generalized rate equations for lifetime simulations
This numerical tool is based on a generalized rate equation system, which is solved for all possible transitions between the defect levels in the forbidden gap and the bands of a semiconductor. The only approximation is, that no interactions between defect levels are included. This is a valid approximation, since the defect density in silicon is typically low.
The applied rate equation system describes the time dependent change of carrier concentrations in the conduction and valence band, as well as in defect levels. In this equation system the optical and thermal generation rates, the band to band and Auger recombination rates and the carrier capture and emission rates from all defects (Cj, Dj, Ej, Fj) are included. The transition rates are described without any approximations.
