Electrical and optical characterization using SPV/Kelvin

Skip breadcrumb navigation

  • Photocarrier generation and separation mechanisms

  • Minority carrier lifetime measurement/Diffusion length calculations

  • Trapped carrier dynamics, time resolved

  • Surface Photovoltage measurements

Figure 1 shows an example using SPV for the characterization of the polishing process on the double-side polished high-resistivity float zone silicon wafer. The red areas in the plots clearly show that the CMP polishing process is not optimal and even signatures of a handling tool are clearly visible in the plots (left below). 

Fig. 1: Using SPV for the characterization of the polishing process

Fig. 1: Using SPV for the characterization of the polishing process

Matching Products

HR-SPSmap with fixed energy excitation sources

SPS/SPV series HR-SPSmap with fixed energy excitation sources

High-Resolution and Sensitive Surface Photovoltage Measurement Solutions

Learn more

HR-SPSmap with variable energy excitation source

SPS/SPV series HR-SPSmap with variable energy excitation source

with a variable energy excitation source

Learn more

DPM100

SPS/SPV series DPM100

Wide range double prism monochromator

Learn more

Get in touch

Do not hesitate to contact us – we are available to assist you with any inquiries or requests.

Use our inquiry tool or reach out via email:
sales@freiberginstruments.com