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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
for ultra-fast crystal orientation, crystal alignment in production, quality control, rocking curve measurements, material...
state-of-the-art XRD system for automatic single crystal ingot orientation, tilting and alignment for grinding
Wafer sorting, crystal orientation, resistivity, optical notch and flat determination
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Mono- and Multi-crystalline wafer lifetime measurement device
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
for production and quality control of monocrystalline Si ingots,bricks and wafers
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
for contactless and temperature dependent lifetime and LBIC measurements
High Resolution Resistivity Mapping Tool for process control and quality assurance measurements
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
High sensitivity, high resolution surface photovoltage (SPV) measurement instrument
High sensitivity, high resolution surface photovoltage spectroscopy (SPS) instrument with a variable energy excitation source...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore suited for a wide variety of applications.
Changes in the conduction type of a multicrystalline ingot are frequent, since a high co dopant concentration is typical for the low quality feedstock, that is used in PV industry. With the MDPingot tool it is possible to detect pn-changes with a 1...
Light Beam Induced Current (LBIC) is a primarily in the photovoltaic sector well established method for the spatial resolved measurement of recombination active defects in ready-progressed solar cells.
Since several years there is the plan to enlarge the wafer size from 300 mm (12 inch) to 450 mm (18 inch) diameter, in order to gain more yield. Of course these wafers also need to be checked for extrinsic and intrinsic impurities and hence highly...
The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the iron concentration as exactly and fast as possible, with a...
is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished.
In recent years the quality of SiC materials has improved profoundly and hence SiC is becoming more and more a competitor to Si for e.g. high-power devices. Since it is a wide-bandgap semiconductor, SiC has a number of advantages when compared to...
Besides silicon GaAs is one of the most important materials in modern technology and therefore a method to investigate the material quality is needed. Since GaAs is a direct semiconductor the recombination lifetime is very small and often not...
The determination of the chromium concentration is very important, since chromium is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the chromium density as exactly and fast as possible and...
Boron-oxygen complexes are one of the main reasons why solar cells degrade, when irradiated with sun light. Hence it is important to measure the boron-oxygen density in silicon fast, destruction free and with a high resolution.
Trapping centers are very important, in order to understand the behavior of carriers in the material and can also have an effect on solar cells. Hence it is desirable to measure the trap density and the activation energy of these trap centers with a...
The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.
InP is applied in high frequency technique, for lasers, communication technique and production of integrated circuits. Hence also for this material methods for defect investigation and quality control are needed.
Lifetime measurements are already widely used for material quality control especially in the photovoltaic industry. Taking it one step further, inline ingot measurements allow to sort out low quality parts of the ingot before sawing wafer and hence...
The minority carrier lifetime is a key parameter for the performance of solar cells. Therefore, it is a suitable criterion for classifying wafers by means of quality. MDP enables investigations with a so far unsurpassed combination of spatial...
For a lot of applications a well passivated surface is necessary e.g. in solar cells. With MDPmap and MDPingot it is possible to investigate the quality and homogeneity of the passivation with a high resolution.
Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the...
In the PV as well as the microelectronic industry there are a lot of applications, were thin epitaxial layers are used. Because of that it is necessary to control the quality of the epitaxial layers with contact less and non-destructive methods to...
µPCD/MDP (QSS)
PID
X-ray diffraction
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