Photoconductivity measurements and trap analysis of wide bandgap nitride semiconductors

Resistance measurements on wafers and bricks

Changes in the conduction type of a multicrystalline ingot are frequent, since a high co dopant concentration is typical for the low quality feedstock, that is used in PV industry. With the MDPingot tool it is possible to detect pn-changes with a 1...

Light Beam Induced Current (LBIC)

Light Beam Induced Current (LBIC) is a primarily in the photovoltaic sector well established method for the spatial resolved measurement of recombination active defects in ready-progressed solar cells.

Minority carrier Lifetime maps on 450 mm wafers

Since several years there is the plan to enlarge the wafer size from 300 mm (12 inch) to 450 mm (18 inch) diameter, in order to gain more yield. Of course these wafers also need to be checked for extrinsic and intrinsic impurities and hence highly...

Iron concentration determination

The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the iron concentration as exactly and fast as possible, with a...

Microwave Detected Photo Induced Current Transient Spectroscopy (MD-PICTS)

is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished.

Minority carrier lifetime measurements on SiC

In recent years the quality of SiC materials has improved profoundly and hence SiC is becoming more and more a competitor to Si for e.g. high-power devices. Since it is a wide-bandgap semiconductor, SiC has a number of advantages when compared to...

GaAs

Besides silicon GaAs is one of the most important materials in modern technology and therefore a method to investigate the material quality is needed. Since GaAs is a direct semiconductor the recombination lifetime is very small and often not...

p/n detection in bricks

Changes in the conduction type of a multicrystalline ingot are frequent, since a high co dopant concentration is typical for the low quality feedstock, that is used in PV industry. With the MDPingot tool it is possible to detect pn-changes with a 1...

Detection of CrB in silicon

The determination of the chromium concentration is very important, since chromium is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the chromium density as exactly and fast as possible and...

Detection of BO2 in silicon

Boron-oxygen complexes are one of the main reasons why solar cells degrade, when irradiated with sun light. Hence it is important to measure the boron-oxygen density in silicon fast, destruction free and with a high resolution.

Trap concentration determination

Trapping centers are very important, in order to understand the behavior of carriers in the material and can also have an effect on solar cells. Hence it is desirable to measure the trap density and the activation energy of these trap centers with a...

Injection dependent measurements

The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.

InP

InP is applied in high frequency technique, for lasers, communication technique and production of integrated circuits. Hence also for this material methods for defect investigation and quality control are needed.

Inline metrology of mc-Si bricks

Lifetime measurements are already widely used for material quality control especially in the photovoltaic industry. Taking it one step further, inline ingot measurements allow to sort out low quality parts of the ingot before sawing wafer and hence...

Highly spatial resolved inline metrology on Multicrystalline Silicon

The minority carrier lifetime is a key parameter for the performance of solar cells. Therefore, it is a suitable criterion for classifying wafers by means of quality. MDP enables investigations with a so far unsurpassed combination of spatial...

Determination of passivation homogeneity and surface recombination velocity

For a lot of applications a well passivated surface is necessary e.g. in solar cells. With MDPmap and MDPingot it is possible to investigate the quality and homogeneity of the passivation with a high resolution.

Photoconductivity measurements of implanted samples

Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the...