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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
Mono- and Multi-crystalline wafer and brick lifetime measurement device for routine quality control, sophisticated material research and development
Si | compound semiconductors | oxides | wide bandgap materials | perovskites | epitaxial layers
[ CdTe | InP | ZnS | SiC | GaAs | GaN | Ge ]
Contactless and destruction free lifetime imaging (μPCD/MDP (QSS)), photoconductivity, resistivity and p/n check according to semi standard SEMI PV9-1110
Wafer cutting, Furnace monitoring, Material optimization and more
Best throughput: >240 bricks/day or >720 wafers/dayMeasurement speed: <4 minutes for a 156 x 156 x 400 mm standard brickYield improvement: 1 mm cutting criteria for a 156 x 156 x 400 mm standard brickQuality control: designed for quality monitoring of processes and materials like mono or multi-crystalline siliconContamination determination: metal (Fe) contaminations originated in crucibles and equipmentReliability: modular and rugged industrial instrument for higher reliability and uptime > 99%Repeatability: > 99%Resistivity: resistivity mapping without frequent calibration
Few examples for research applications,
Iron concentration determination
Trap concentration determination
Boron oxygen determination
Injection dependent measurements and more
Click here to download the product flyer and technical data.
completely contactless destruction free electrical semiconductor characterisation
special “underneath the surface” lifetime measurement technique
advanced sensitivity for visualisation of so far invisible defects
automated cut criteria definition
spacial resolved p/n conduction type transformation detection
Spot size variation
Resistivity measurement (bricks/wafers)
Reflection measurement (MDP)
LBIC for solar cells
LBIC, BiasMDP measurement stage with contacts
Resistivity calibration set (bricks/wafers)
Internal iron mapping of Si
Bar code reader
Wide range of lasers
Contact us for more information.
The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the iron concentration as exactly and fast as possible, with a very high resolution and preferably inline.
Trapping centers are very important, in order to understand the behavior of carriers in the material and can also have an effect on solar cells. Hence it is desirable to measure the trap density and the activation energy of these trap centers with a high resolution.
Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the necessary annealing steps. The difficulties so far...
The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.