CN

MDPpro

Mono- and Multi-crystalline wafer and brick lifetime measurement device for routine quality control, sophisticated material research and development

Si | compound semiconductors | oxides | wide bandgap materials | perovskites | epitaxial layers

[ CdTe | InP | ZnS | SiC | GaAs | GaN | Ge ]

  • Contactless and destruction free lifetime imaging (μPCD/MDP (QSS)), photoconductivity, resistivity and p/n check according to semi standard SEMI PV9-1110

  • Wafer cutting, Furnace monitoring, Material optimization and more

Routine Lifetime Measurement, Quality Control & Inspection

Best throughput: >240 bricks/day or >720 wafers/day
Measurement speed: <4 minutes for a 156 x 156 x 400 mm standard brick
Yield improvement: 1 mm cutting criteria for a 156 x 156 x 400 mm standard brick
Quality control: designed for quality monitoring of processes and materials like mono or multi-crystalline silicon
Contamination determination: metal (Fe) contaminations originated in crucibles and equipment
Reliability: modular and rugged industrial instrument for higher reliability and uptime > 99%
Repeatability: > 99%
Resistivity: resistivity mapping without frequent calibration

Sophisticated Material Research & Development

Few examples for research applications,

  • Iron concentration determination

  • Trap concentration determination

  • Boron oxygen determination

  • Injection dependent measurements and more

Click here to download the product flyer and technical data.

  • MDPpro - Temperature dependent lifetime measurements of mono- and multi-crystalline wafers

Facts

  • completely contactless destruction free electrical semiconductor characterisation

  • special “underneath the surface” lifetime measurement technique

  • advanced sensitivity for visualisation of so far invisible defects

  • automated cut criteria definition

  • spacial resolved p/n conduction type transformation detection

Configuration options

  • Spot size variation

  • Resistivity measurement (bricks/wafers)

  • Background/Bias light

  • Reflection measurement (MDP)

  • LBIC

  • BiasMDP

  • LBIC for solar cells

  • LBIC, BiasMDP measurement stage with contacts

  • Reference wafer

  • Resistivity calibration set (bricks/wafers)

  • Internal iron mapping of Si

  • P/N detection

  • Bar code reader

  • Wide range of lasers

Contact us for more information.

Applications for MDPpro

Iron concentration determination

The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the iron concentration as exactly and fast as possible, with a very high resolution and preferably inline.

more

Trap concentration determination

Trapping centers are very important, in order to understand the behavior of carriers in the material and can also have an effect on solar cells. Hence it is desirable to measure the trap density and the activation energy of these trap centers with a high resolution.

more

Photoconductivity measurements of implanted samples

Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the necessary annealing steps. The difficulties so far...

more

Injection dependent measurements

The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.

more

MPD series / µPCD

µPCD/MDP (QSS)

PID series

PID

XRD series / X-ray diffraction

X-ray diffraction

Branches

Projects

Projects

Company

Company