Choose another division
Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
for ultra-fast crystal orientation, crystal alignment in production, quality control, rocking curve measurements, material...
state-of-the-art XRD system for automatic single crystal ingot orientation, tilting and alignment for grinding
Wafer sorting, crystal orientation, resistivity, optical notch and flat determination
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Mono- and Multi-crystalline wafer lifetime measurement device
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
for production and quality control of monocrystalline Si ingots,bricks and wafers
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
for contactless and temperature dependent lifetime and LBIC measurements
High Resolution Resistivity Mapping Tool for process control and quality assurance measurements
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
High sensitivity, high resolution surface photovoltage (SPV) measurement instrument
High sensitivity, high resolution surface photovoltage spectroscopy (SPS) instrument with a variable energy excitation source...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
For production and quality control of monocrystalline Si ingots,bricks and wafers.
Si for HJT, HIT, TOPcon, bifacial PERC, PERC+ solar cells, Perovskites and more.
Range of lifetimes 20 ns to 100 ms (for samples > 0.3 Ohm cm)
SEMI standard PV9-1110
Measurement speed < 30 sec for linescan < 5 min for complete mapping
Simultaneous measurement of lifetime μPCD/MDP (QSS) and resistivity
Automatic geometric recognition G12, M10 bricks and wafers
Lifetime & Resistivity Mapping
Crystal Growth Monitoring (i. e. Slip lines)
Contamination Monitoring
Oxygen Striations/OSF Ring
Iron Mapping for p-doped Si
Light Beam Induced Current (LBIC)
Sheet Resistance for Emitter Layer
and more...
Click here to download the product flyer and technical data.
User-friendly and advanced operating software with:
Export and import functions
User structure with operator
Overview over all performed measurements
Sample parameter input
Single point measurements e. g. injection dependent measurements
Mapping
Recipes
Package of analysis functions
View of line scans and single transients
Spot size variation
Resistivity measurement (bricks/wafers)
Background/Bias light
Refl ection measurement (MDP)
LBIC
Internal iron mapping of p-doped Si
P/N detection
Bar code reader
Automatic geometric recognition
Wide range of lasers
The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the iron concentration as exactly and fast as possible, with a very high resolution and preferably inline.
more
Trapping centers are very important, in order to understand the behavior of carriers in the material and can also have an effect on solar cells. Hence it is desirable to measure the trap density and the activation energy of these trap centers with a high resolution.
Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the necessary annealing steps. The difficulties so far...
The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.
µPCD/MDP (QSS)
PID
X-ray diffraction
Projects
Company