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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
The performance of semiconductor devices depends fundamentally on key electrical parameters of the material and therefore also on defect densities and their electrical properties.
The performance of semiconductor devices depends fundamentally on key electrical parameters of the material and therefore also on defect densities and their electrical properties. With the development of the advanced method MDP (microwave detected photoconductivity) it is possible to measure these very important electrical parameters with so far not achieved sensitivity, resolution and speed.
The minority carrier lifetime is one of the most important and significant material parameters. It is extremely sensitive to smallest amounts of impurities or intrinsic defects and hence an ideal parameter for inline characterization of material...
When light of sufficient energy is absorbed by a semiconductor, the number of free electrons and holes changes and raises the electrical conductivity of the semiconductor.
The mobility is a quantity related to the drift velocity of electrons or holes in an applied electric field across a material. The mobility depends on different scattering processes that can decelerate the free carriers, like collisions with the...
For the efficiency of solar cells the properties of a defect and its impact on the material quality are of great importance .