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PID Applications Production Monitoring Learn more EVA Evaluation Learn more Solar Cell Classification Learn more Mini-module Classification Learn more Glass Evaluation Learn more

Publications for MDP A.S. Kovali, M. Demant, B. Rebba, N. Schüler, J. Haunschild, S. Rein Early stage quality assessment in silicon ingots from MDP brick characterization Jan Beyer, Nadine Schüler, Jürgen Erlekampf, Birgit Kallinger, Patrick Berwian, Kay Dornich, Johannes Heitmann Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity Paul M. Jordan, Daniel K. Simon, Franz P.G. Fengler, Thomas Mikolajick, and Ingo Dirnstorfer 2D Mapping of Chemical and Field Effect Passivation of Al 2 O 3 on Si Substrates Paul M. Jordan, Daniel K. Simon, Thomas Mikolajick, and Ingo Dirnstorfer BiasMDP: Carrier lifetime characterization technique with applied bias voltage N. Schüler, B. Berger, A. Blum, K. Dornich, J.R. Niklas High Resolution Inline Topography of Iron in P-doped Mutlicrystalline Bricks by MDP K. Dornich, N. Schüler, J.R. Niklas Injection dependent lifetime spectroscopy with a varying pulse length K. Dornich, N. Schüler, B. Berger, J.R. Niklas Fast, high resolution, inline contactless electrical semiconductor characterization for photovoltaic applications by MDP Bastian Berger, Nadine Schüler, Sabrina Anger, Bianca Gründig-Wendrock, Jürgen R. Niklas, Kay Dornich Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP) N. Schüler, T. Hahn, K. Dornich and J.R. Niklas: Spatially resolved determination of trapping parameters in P-doped silicon by microwave detected photoconductivity 25th EUPVSEC Valencia, Spain N. Schüler, D. Mittelstrass, K. Dornich and J.R. Niklas: High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements 35th IEEE Photovoltaic Specialists conference, Honolulu Hawaii N. Schüler, D. Mittelstrass, K. Dornich, J.R. Niklas and H. Neuhaus: Next generation inline minority carrier lifetime metrology on multicrystalline silicon bricks for pv 35th IEEE Photovoltaic Specialists conference, Honolulu Hawaii N. Schüler, T. Hahn, K. Dornich, J.R. Niklas: Versatile simulation tool and novel measurement method for electrical characterization of semiconductors Solid State Phenomena 156-158, 241-246 (2010) N. Schüler, T. Hahn, S. Schmerler, S. Hahn, K. Dornich and J.R. Niklas: Simulations of photoconductivity and lifetime for steady state and nonsteady state measurements Journal of Applied Physics 107 (2010), 064901 N. Schüler, T. Hahn, K. Dornich, J.R. Niklas, B. Gründig-Wendrock: Theoretical and experimental comparison of contactless lifetime measurement methods for thick silicon samples Solar Energy Materials & Solar Cells 94 (2010), 1076-1080 K. Dornich, N. Schüler, D. Mittelstraß, A. Krause, B. Gründig-Wendrock, K. Niemietz and J.R. Niklas: New spatial resolved inline metrology on multicrystalline silicon for PV (To be published in proceedings of 24th EU PVSEC) S. Schmerler, T. Hahn, S. Hahn, J.R. Niklas, B. Gründig Wendrock: Explanation of positive and negative PICTS peaks in SI-GaAs J. Mater Sci: Mater Electron T. Hahn, S. Schmerler, S. Hahn, J.R. Niklas: Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations J. Mater Sci: Mater Electron (2008) 19:S79-S82 K. Niemietz, K. Dornich, M. Gosh, A. Müller, J.R. Niklas Contactless investigation of electrical properties and defect spectroscopy of mc-Si at low injection level 21st European Photovoltaic Solar Energy Conference, p. 361-364 K. Dornich, K. Niemietz, Mt. Wagner, J.R. Niklas Contact less electrical defect characterisation of silicon by MD-PICTS Material Science in Semiconductor Processing, Elsevier, 241-245 S. Hahn, Franziska Christine Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J.R. Niklas, Erik Janzén Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material Mater. Sci. Forum 600-603, 405 (2009). S. Hahn, K. Dornich, T. Hahn, A. Köhler, J.R. Niklas, P. Schwesig, G. Müller Contact free defect investigation of wafer annealed SI InP Material Science in Semiconductor Processing 9, Elsevier, 355-358 K. Dornich, T.Hahn, J.R. Niklas Non destructive electrical defect characterisation and topography of silicon wafers and epitaxial layers Mater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS S. Hahn, T. Hahn, K. Dornich, B. Gruendig - Wendrock, J.R. Niklas, P. Schwesig, G. Müller Contact free defect investigation in as grown Fe doped SI - InP Mater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS

MDP Technology Electrical Characterization The performance of semiconductor devices depends fundamentally on key electrical parameters of the material and therefore also on defect densities and their electrical properties. Even in a single crystal, the crystal orientation can exhibit small changes over the surface, which result from internal strains caused by lattice defects. Orderly grown thin films can also have an interesting in-plane orientation distribution. Mapping a surface requires a lot of measurements. Here the Omega Scan method can offer its advantage in speed. The picture shows an orientation map measured on a (Si, Ge) solid solution wafer . The maximum orientation difference is 0.03°. Concentric circles follow the growth rings of the crystal. Minority carrier lifetime The measured effective lifetime is composed of the bulk lifetime and surface lifetime, which depends on the surface properties of a sample. Hence the surface has to be passivated, if you want… Learn more Photoconductivity When light of sufficient energy is absorbed by a semiconductor, the number of free electrons and holes changes and raises the electrical conductivity of the semiconductor. This increase is… Learn more Resistivity The electrical resistivity directly depends on the density of the semiconductor and is therefore a useful parameter to monitor doping profiles and homogeneity. The lifetime and diffusion length… Learn more Mobility The mobility is a quantity related to the drift velocity of electrons or holes in an applied electric field across a material. The mobility depends on different scattering processes that can… Learn more Diffusion length Learn more Defect properties The properties of a defect and its impact on the material quality can be described by three main parameters:defect concentration NT, capture cross sections for electrons and holes σn, σp,… Learn more Simulation of carrier profiles For a better understanding of lifetime measurements and to achieve a better comparability between different measuring methods, it is necessary to perform simulations. Lifetime simulations From the simulated time dependent carrier concentrations the photoconductivity can be calculated using the mobility model of DORKEL and LETURCQ [2] . The minority carrier lifetime can be… Learn more Simulation of carrier profiles The measurement of thick samples as bricks leads to new questions and problems. One of these questions is how the carrier profiles that develops in a sample effect the lifetime measurements. To… Learn more More technologies Microwave detected photoconductivity (MDP) The novel method MDP is well suited for both, defect investigation by e.g. injection dependent minority carrier lifetime measurements, as well as mapping of wafers or even bricks for inline… Learn more Comparison to µ-PCD and QSSPC Besides MDP the two most important contact less lifetime measuring methods are QSSPC (quasi steady state photoconductivity) and µ-PCD (microwave detected photoconductive decay). Currently one… Learn more MD-PICTS MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. This allows for a spatially resolved defect characterization.… Learn more Penetration depth of different laser wavelength in silicon The microwave detected photoconductivity measures the photoconductivity after the irradiation of the sample with light. Usually the light should have an energy that is higher than the bandgap,… Learn more Materials Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction with our advanced method MDP.… Learn more

HR-SPS Technology Electrical and optical characterization using surface photovoltage spe Photocarrier generation and separation mechanisms, Minority carrier lifetime measurement/Diffusion length calculations, Trapped carrier dynamics, time resolved, Surface Photovoltage… Learn more SPV signal analysis: fits and simulations We are currently developing simulation tools to enable first principle calculations of the electronic structure in a given photoactive material or material combination, based on solid-state… Learn more Comparison between MPD and SPV techniques MDP (microwave detected photoconductivity): sensitive to moving photogenerated charge carriers (bulk property), SPV (surface photovoltage): sensitive to surface AND bulk properties with respect… Learn more Static, transient or modulated light excitation pro and con The time-resolved or frequency-modulated, surface photovoltage spectroscopy (SPS) is based on a time-resolved/frequency modulated measurement of the spectral dependence of the surface… Learn more SPV-Picts SPV temperature dependence measurements Use this option to make SPV measurements at different temperatures between room temperature and 200°C. Temperature-dependent SPV measurements can be applied to measure activation energies or to… Learn more Materials Any photoactive material from raw material to finished device:From powder-based samples over wafers to boules or ingots. From 10 x 10 mm2 and up to 300 mm diameter, From titanium dioxide over… Learn more

MDP Applications The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore suited for a wide variety of applications. Photoconductivity measurements and trap analysis Learn more Resistance measurements on wafers and bricks Learn more Light Beam Induced Current (LBIC) Learn more Minority carrier Lifetime maps on 450 mm wafers Learn more Iron concentration determination Learn more Microwave Detected Photo Induced Current Transient Spectroscopy Learn more Minority carrier lifetime measurements on SiC Learn more Investigation of material quality of GaAs Learn more p/n detection in bricks Learn more Detection of CrB in silicon Learn more Detection of BO2 in silicon Learn more Trap concentration determination Learn more Injection dependent measurements Learn more Investigation of defect levels in InP Learn more Inline metrology of mc-Si bricks Learn more Highly spatial resolved inline metrology on Multicrystalline Silicon Learn more Determination of passivation homogeneity and surface recombination vel Learn more Photoconductivity measurements of implanted samples Learn more Lifetime determination of epitaxial silicon thin-film layers Learn more

Publications for HS-SPS Dittrich, T. and Fengler, S. (2025). Surface Photovoltage Spectroscopy of Ultrawide Bandgap Materials. Phys. Status Solidi RRL 2400384. https://doi.org/10.1002/pssr.202400384 Dittrich, Thomas & Fengler, Steffen & Franke, Michael. (2024). Mirrorless fused silica based double-prism monochromator for continuous measurements from the near infrared to deep ultraviolet. Applied Optics. 63. 6880-6886. 10.1364/AO.529366. Dittrich, Thomas. (2022). Transient surface photovoltage spectroscopy of diamond. AIP Advances. 12. 065206. 10.1063/5.0089398.

SPS/SPV Applications Silicon photovoltaic – Wafer check after diamond wire sawing Learn more Contactless detection of bulk polarization phenomena in semiconductors Learn more Electronic transitions in diamond Learn more Characterization of Ga2O3 Learn more Investigation of photocatalytic materials (BiVO4) Learn more Study and monitoring of photocatalytic materials (TiO2) Learn more Contactless characterization of SiC, GaN and AlGaN Learn more Defects in 4H-SiC Learn more Defects and charge dynamics in 3C- and 4H-SiC investigated by surface Learn more

MDP Software Software - PICTSStudio The PICTSStudio offers features for defect investigation like,Operation and configuration area, Results/charting, View of single transients and temperature dependent curves, Evaluation of… Learn more

HR-SPS Software Software - SPS Studio Learn more

X-ray Diffraction Innovative Approaches to Crystal Orientation and Quality Assurance: The XRD series Freiberg Instruments specializes in manufacturing state-of-the-art X-ray diffractometers and automated in-line systems designed for crystal lattice orientation and sample alignment. Our ultra-fast and precise Omega-scan technology determines complete crystal orientations in just seconds. Enhance quality control with options like 2D (X-Y) or 3D mapping, rocking-curve measurements, and full automation, making our diffractometers indispensable for single crystal manufacturers. Capable of handling boules, ingots, wafers, bars, panels, rods, and more, our XRD devices deliver reliable performance in demanding production environments. Operating 24/7, our systems align crystals for sawing or grinding, locate flats or notches, and verify final products like wafers and blanks, ensuring unmatched precision and efficiency. XRD series Ingot XRD Learn more XRD series Wafer XRD Learn more XRD series Omega/Theta XRD Learn more XRD series DDCOM Learn more XRD series SDCOM Learn more XRD series XRD-OEM Learn more XRD series Quartz XRD Learn more XRD series Ingot XRD SiC Learn more XRD series Quartz Bar XRD Learn more XRD series Quartz Wafer XRD Learn more XRD series Quartz Blank XRD Learn more XRD series XRDmap Pro Learn more XRD series Angle Sorter Learn more We specialize in the ultra-fast and precise Omega-scan method, capturing all crystal orientation parameters in a single rotation within just 5 seconds. Dr. Ing. Hans-Arthur Bradaczek Head of X-ray Technology Discover more of the XRD series Applications Learn more Technology Learn more Software Learn more Publications Learn more Get in touch Do not hesitate to contact us – we are available to assist you with any inquiries or requests. Use our inquiry tool or reach out via email: sales @ freiberginstruments.com