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Skip breadcrumb navigation Breadcrumb Freiberg Instruments Products Resistivity Mapping RESmap RESmap High-Precision Resistivity Mapping System for Accurate Material Analysis Interested? Get in touch! Contact now Product Sheet Skip menu Quick navigation Features Applications Specifications Technology Software Contact Fast and reliable resistivity mapping tool for highly doped samples Exceptional Repeatability (sigma < 0.15%) Advanced Stability Sensors Seamless Inline Integration and Effortless Calibration Materials The RESmap is specialized on highly doped materials Si SiC and more Features & Benefits Sigma < 0.15 % exceptional repeatability Resistivity 1–100 mOhm cm Throughput > 20 Wafers/hour ± 5 % accuracy with temperature correction ± 5 % accuracy with temperature correction Exceptional Repeatability Achieves ultra-high precision with a standard deviation of less than 0.15%, ensuring consistent and reliable results. Advanced Stability Sensors Features an integrated distance and temperature sensor, maintaining superior measurement accuracy and stability Seamless Inline Integration Available as a fully automated, compact sensor, ideal for smooth and efficient inline applications Effortless Calibration Enables easy and stable calibration using a dedicated sample set, reducing setup time and ensuring long-term reliability Contact free measurement and imaging of the resistivity High frequency eddy current sensing principle with integrated IR temperature sensor to correct for temperature variations of the sample Material form factor Flat or slightly curved wafers, boules, ingots slabs, blanks and thin films X-Y placement resolution ≥ 0.1 mm Edge exclusion 5 mm Reliability modular, compact bench top instrument design for high reliability and uptime > 99% Measurement time < 3s for the measurement and < 1s between measurements Measurement speed < 30s for a 200 mm wafer/ingot, 9 points Bull´s eye chart management for maximum accuracy and precision Measurement principle of eddy current sensor Applications High precision Resistivity Measurement Measuring resistivity in highly doped semiconductors is crucial for several reasons:Quality control and Doping density verification, Device performance prediction, Extraction of material… Learn more RESmap delivers unmatched repeatability, stability and accuracy – making it the trusted choice for precise resistivity mapping across a wide range of materials. Dr. Christian Hagendorf Key Account Manager Interested? Our experts are happy to assist you. Get in touch! Contact us now! Prepared for Automation different platforms available Measurement method conforms with SEMI MF673 Data and data validity checked using NIST standards Accuracy over calibration interval ±1% Integrated IR temperature sensor (±0.1°) to allow reporting resistivity at a standard temperature, different from the actual temperature of the sample Sample thickness correction for samples where the penetration depth of the high frequency signal is larger than the penetration depth Power requirements 100-250 VAC, 5 A Dimensions (w/h/d) 465 x 550 x 600 mm Software control standard PC with Window 10 or latest, 2 Ethernet ports Download Product Flyer PDF (167 KB) Technologies Minority carrier lifetime The measured effective lifetime is composed of the bulk lifetime and surface lifetime, which depends on the surface properties of a sample. Hence the surface has to be passivated, if you want… Learn more Photoconductivity When light of sufficient energy is absorbed by a semiconductor, the number of free electrons and holes changes and raises the electrical conductivity of the semiconductor. This increase is… Learn more Resistivity The electrical resistivity directly depends on the density of the semiconductor and is therefore a useful parameter to monitor doping profiles and homogeneity. The lifetime and diffusion length… Learn more Mobility The mobility is a quantity related to the drift velocity of electrons or holes in an applied electric field across a material. The mobility depends on different scattering processes that can… Learn more Diffusion length Learn more Defect properties The properties of a defect and its impact on the material quality can be described by three main parameters:defect concentration NT, capture cross sections for electrons and holes σn, σp,… Learn more Lifetime simulations From the simulated time dependent carrier concentrations the photoconductivity can be calculated using the mobility model of DORKEL and LETURCQ [2] . The minority carrier lifetime can be… Learn more Simulation of carrier profiles The measurement of thick samples as bricks leads to new questions and problems. One of these questions is how the carrier profiles that develops in a sample effect the lifetime measurements. To… Learn more Microwave detected photoconductivity (MDP) The novel method MDP is well suited for both, defect investigation by e.g. injection dependent minority carrier lifetime measurements, as well as mapping of wafers or even bricks for inline… Learn more Comparison to µ-PCD and QSSPC Besides MDP the two most important contact less lifetime measuring methods are QSSPC (quasi steady state photoconductivity) and µ-PCD (microwave detected photoconductive decay). Currently one… Learn more MD-PICTS MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. This allows for a spatially resolved defect characterization.… Learn more Penetration depth of different laser wavelength in silicon The microwave detected photoconductivity measures the photoconductivity after the irradiation of the sample with light. Usually the light should have an energy that is higher than the bandgap,… Learn more Materials Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction with our advanced method MDP.… Learn more User-friendly and advanced operating software with Resistivity measurement recipes Export/import functions and raw data access Multi-level user account management Overview over all performed measurements Mapping options (line, cross, star, full map, topography, user defined pattern) Package of analysis functions; statistics, variance analysis, temperature correction functions and library Remote accessibility; Internet based based system allows remote operation and technical support from anywhere in the world Get in touch Do not hesitate to contact us – we are available to assist you with any inquiries or requests. Use our inquiry tool or reach out via email: sales @ freiberginstruments.com

Skip breadcrumb navigation Breadcrumb Freiberg Instruments Products Microwave Detected Photoconductivity MDpicts MDpicts Temperature-Dependent Lifetime Measurement System for Advanced Material Analysis Interested? Get in touch! Contact now Product Sheet Laser Selection Guide Skip menu Quick navigation Features Applications Technology Contact Enables root cause analysis of material defects: destruction free, flexible and precise Cooling with stirling cooler without handling of liquid nitrogen Customized laser and optic integration for all your materials Fully automated temperature dependent measurements Materials The MDpicts enables the electrical characterization of almost all semiconductors Si SiC Ge GaAs Ga₂O₃ InP Diamond and more Features & Benefits 355–1550 nm Available wavelengths 10 ns Time resolution 30–300 K Temperature range Repetition < 60 min. Measurement time Repetition < 60 min. Measurement time Sensitivity: highest sensitivity for electrical defect characterization Temperature range: liquid nitrogen (77 K) up to 500 K. Optional: liquid helium (4 K) or higher temperatures Range of decay constants: 20 ns to several ms Contamination determination: measurement of fundamental trap level properties: activation energy and capture cross section of traps, temperature and injection dependent lifetime measurements Repeatability: > 99%, Measurement time: < 60 minutes. Liquid nitrogen consumption: 2 l/run Flexibility: select from different wavelengths from 365 nm up to 1480 nm for materials of different kinds Accessibility: IP based system allows remote operation and technical support from anywhere in the world From the slope of the Arrhenius plot (Fig. 3) the activation energy can be determined. With the novel commercially available MD-PICTS equipment it is possible to measure the temperature dependence of the photoconductivity transient in a range from 20…500 K. In the past Si, GaAs, InP, SiC and many more semiconductors have already been successfully investigated with this method. Download Product Sheet PDF (858 KB) Fig. 4: example of a MD-PICTS spectrum of different tempered Cz—Si wafers Fig. 1: Temperature dependent carrier emission transients Fig. 2: Box car evaluation with varying ID Fig. 3: Arrhenius plot In order to investigate defects in semiconductors it is widely spread to use temperature dependent methods as deep level transient spectroscopy (DLTS). Usually for these methods it is necessary to form contacts on the samples, which means the sample itself is often altered due to annealing steps. Furthermore for lot of semiconductors some effort is needed to create ohmic contacts at all. MD-PICTS is a non-destructive, contactless method with which the activation energies and capture cross sections of defects can be determined with a high accuracy. For MD-PICTS measurements the photoconductivity of a sample after the irradiation with light is measured with a resonant microwave cavity. For the determination of the activation energy the temperature dependent change of the photoconductivity transient is determined via a window analysis, which is also used for DLTS measurements (Fig. 1). Fig.2 shows a so called MD-PICTS spectrum which results from the window analysis. Every peak in this spectrum is a certain defect in the sample. The temperature shift of the maximum of this peak is plotted in an Arrhenius plot according to this formula of the emission rate: \(e_{n} = \gamma \sigma_{n}T^2e^{-\frac{E_{A}}{kT}}\) Applications Photoconductivity measurements and trap analysis Equipped with a 355 nm laser (μ-PCD) or a 375 nm laser diode (MDP), the MDPmap as well as the MDpicts from Freiberg Instruments are suitable for photoconductivity measurements and trap analysis… Learn more Microwave Detected Photo Induced Current Transient Spectroscopy In order to investigate defects in semiconductors it is widely spread to use temperature dependent methods as deep level transient spectroscopy (DLTS). Usually for these methods it is necessary… Learn more Minority carrier lifetime measurements on SiC In recent years the quality of SiC materials has improved profoundly and hence SiC is becoming more and more a competitor to Si for e.g. high-power devices. Since it is a wide-bandgap… Learn more Investigation of material quality of GaAs In contrast to other techniques MD-PICTS (microwave detected photo induced current transient spectroscopy) can detect signals even from thin surface regions (3 µm) of SI GaAs samples and is… Learn more Investigation of defect levels in InP MD-PICTS is a well suited method for the investigation of defect levels in InP. For example investigations on indium phosphide shows that the defect content changes during annealing processes,… Learn more Interested? Our experts are happy to assist you. Get in touch! Contact us now! Technologies Minority carrier lifetime The measured effective lifetime is composed of the bulk lifetime and surface lifetime, which depends on the surface properties of a sample. Hence the surface has to be passivated, if you want… Learn more Photoconductivity When light of sufficient energy is absorbed by a semiconductor, the number of free electrons and holes changes and raises the electrical conductivity of the semiconductor. This increase is… Learn more Resistivity The electrical resistivity directly depends on the density of the semiconductor and is therefore a useful parameter to monitor doping profiles and homogeneity. The lifetime and diffusion length… Learn more Mobility The mobility is a quantity related to the drift velocity of electrons or holes in an applied electric field across a material. The mobility depends on different scattering processes that can… Learn more Diffusion length Learn more Defect properties The properties of a defect and its impact on the material quality can be described by three main parameters:defect concentration NT, capture cross sections for electrons and holes σn, σp,… Learn more Lifetime simulations From the simulated time dependent carrier concentrations the photoconductivity can be calculated using the mobility model of DORKEL and LETURCQ [2] . The minority carrier lifetime can be… Learn more Simulation of carrier profiles The measurement of thick samples as bricks leads to new questions and problems. One of these questions is how the carrier profiles that develops in a sample effect the lifetime measurements. To… Learn more Microwave detected photoconductivity (MDP) The novel method MDP is well suited for both, defect investigation by e.g. injection dependent minority carrier lifetime measurements, as well as mapping of wafers or even bricks for inline… Learn more Comparison to µ-PCD and QSSPC Besides MDP the two most important contact less lifetime measuring methods are QSSPC (quasi steady state photoconductivity) and µ-PCD (microwave detected photoconductive decay). Currently one… Learn more MD-PICTS MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. This allows for a spatially resolved defect characterization.… Learn more Penetration depth of different laser wavelength in silicon The microwave detected photoconductivity measures the photoconductivity after the irradiation of the sample with light. Usually the light should have an energy that is higher than the bandgap,… Learn more Materials Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction with our advanced method MDP.… Learn more For more information please read: [1] B. Berger, N. Schüler, S. Anger, B. Gruendig-Wendrock, J. R. Niklas, K. Dornich, physica status solidi A, 1-8 [2] C. R. Engst, I. Eisele, and C. Kutter, Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy, Journal of Applied Physics 127, 035704 (2020) [3] C. R. Engst, M. Rommel, C. Bscheid, I. Eisele and C. Kutter, Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity, Journal of Applied Physics 122, 215704 (2017) Get in touch Do not hesitate to contact us – we are available to assist you with any inquiries or requests. Use our inquiry tool or reach out via email: sales @ freiberginstruments.com

Skip breadcrumb navigation Breadcrumb Freiberg Instruments Products Microwave Detected Photoconductivity MDPlinescan MDPlinescan Versatile OEM Unit for Lifetime Measurements on Silicon Samples, from Bricks to Processed Wafers Interested? Get in touch! Contact now Product Sheet Laser Selection Guide Skip menu Quick navigation Features Applications Specifications Technology Contact Features & Benefits Inline line scanner or single spot measurement The MDPlinescan is an OEM unit designed for seamless integration into automated inspection systems. It performs carrier lifetime scans in real-time, typically with samples transported beneath the measurement head by a conveyor belt or robotic system. Applications span from silicon brick to wafer inspection, achieving measurement speeds of under one second per wafer. It is widely used for assessing incoming material quality in cell production lines and for process quality checks after passivation and diffusion, among other specialized applications. Integration is straightforward, requiring only an Ethernet connection and power supply. Facts allows for single wafer investigation recipe based measurements monitoring of material quality, process integrity and stability Advantages Measurement of minority carrier lifetime and resistivity lines cans at µ-PCD or steady state excitation conditions are in the focus of this small tool. OEM unit for the integration in production lines for multi- or monocrystalline silicon wafers at different preparation stages up to devices, bricks or ingots. Small size and standard automation interfaces allows for easy integration. Focus is put on long reliability and precision of measurement results. Applications Highly spatial resolved inline metrology on Multicrystalline Silicon Non-destructive measurements of minority carrier lifetime are well established and widely used for process control and characterization of defects in crystalline silicon. With our tool MDPinline… Learn more Determination of passivation homogeneity and surface recombination vel The measured or effective lifetime consists of the bulk lifetime and the surface lifetime, via: \(\cfrac{1}{\tau_{eff}} = \cfrac{1}{\tau_{bulk}} + \cfrac{1}{\tau_{surface}}\) That‘s why the… Learn more Interested? Our experts are happy to assist you. Get in touch! Contact us now! sample raw multi or mono wafers of multiple sizes like 156 mm², bricks, cells sample size above 50 x 50 mm² resistivity 0.2 - 10³ Ohm cm conduction type p, n material silicon wafers, partially or fully processed wafers, compound semiconductors and beyond measurable properties carrier lifetime hardware interface ethernet dimension 174 x 107 x 205 mm, weight: 3 kg power 24 V DC, 2 A Technologies Minority carrier lifetime The measured effective lifetime is composed of the bulk lifetime and surface lifetime, which depends on the surface properties of a sample. Hence the surface has to be passivated, if you want… Learn more Photoconductivity When light of sufficient energy is absorbed by a semiconductor, the number of free electrons and holes changes and raises the electrical conductivity of the semiconductor. This increase is… Learn more Resistivity The electrical resistivity directly depends on the density of the semiconductor and is therefore a useful parameter to monitor doping profiles and homogeneity. The lifetime and diffusion length… Learn more Mobility The mobility is a quantity related to the drift velocity of electrons or holes in an applied electric field across a material. The mobility depends on different scattering processes that can… Learn more Diffusion length Learn more Defect properties The properties of a defect and its impact on the material quality can be described by three main parameters:defect concentration NT, capture cross sections for electrons and holes σn, σp,… Learn more Lifetime simulations From the simulated time dependent carrier concentrations the photoconductivity can be calculated using the mobility model of DORKEL and LETURCQ [2] . The minority carrier lifetime can be… Learn more Simulation of carrier profiles The measurement of thick samples as bricks leads to new questions and problems. One of these questions is how the carrier profiles that develops in a sample effect the lifetime measurements. To… Learn more Microwave detected photoconductivity (MDP) The novel method MDP is well suited for both, defect investigation by e.g. injection dependent minority carrier lifetime measurements, as well as mapping of wafers or even bricks for inline… Learn more Comparison to µ-PCD and QSSPC Besides MDP the two most important contact less lifetime measuring methods are QSSPC (quasi steady state photoconductivity) and µ-PCD (microwave detected photoconductive decay). Currently one… Learn more MD-PICTS MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. This allows for a spatially resolved defect characterization.… Learn more Penetration depth of different laser wavelength in silicon The microwave detected photoconductivity measures the photoconductivity after the irradiation of the sample with light. Usually the light should have an energy that is higher than the bandgap,… Learn more Materials Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction with our advanced method MDP.… Learn more Get in touch Do not hesitate to contact us – we are available to assist you with any inquiries or requests. Use our inquiry tool or reach out via email: sales @ freiberginstruments.com