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Photoconductivity When light of sufficient energy is absorbed by a semiconductor, the number of free electrons and holes changes and raises the electrical conductivity of the semiconductor. Photocondu

Photoconductivity measurements of implanted samples Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homoge

Investigation of defect levels in InP InP is applied in high frequency technique, for lasers, communication technique and production of integrated circuits. Hence also for this material methods for de

Inline metrology of mc-Si bricks Lifetime measurements are already widely used for material quality control especially in the photovoltaic industry. Taking it one step further, (Alttext zu lang) With

Minority carrier lifetime measurements on SiC In recent years the quality of SiC materials has improved profoundly and hence SiC is becoming more and more a competitor to Si for e.g. high-power device

Microwave Detected Photo Induced Current Transient Spectroscopy (MD-PICTS) is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. In o

Trap concentration determination Many lifetime measuring methods as QSSPC, µPCD or CDI, as well as MDP suffer from an anomalous high measured lifetime at very low injections. (Alttext kürzen, da zu la

Light Beam Induced Current (LBIC) Light Beam Induced Current (LBIC) is a primarily in the photovoltaic sector well established method for the spatial resolved measurement of recombination active defec

Iron concentration determination The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. (Alttext kürz

Minority carrier Lifetime maps on 450 mm wafers Since several years, the microelectronic industry is planning to enlarge the wafer size from 300 mm (12 inch) to 450 mm (18 inch) diameter, in order to