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Injection dependent measurements The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about

Investigation of defect levels in InP InP is applied in high frequency technique, for lasers, communication technique and production of integrated circuits. Hence also for this material methods for de

Inline metrology of mc-Si bricks Lifetime measurements are already widely used for material quality control especially in the photovoltaic industry. Taking it one step further, (Alttext zu lang) With

Highly spatial resolved inline metrology on Multicrystalline Silicon The minority carrier lifetime is a key parameter for the performance of solar cells. Therefore it is a suitable criterion for class

Determination of passivation homogeneity and surface recombination velocity For a lot of applications a well passivated surface is necessary e.g. in solar cells. With MDPmap and MDPingot it is possibl

Photoconductivity measurements of implanted samples Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homoge

Lifetime determination of epitaxial silicon thin-film layers In the PV as well as the microelectronic industry there are a lot of applications, were thin epitaxial layers are used. Because of that it

Minority carrier lifetime The minority carrier lifetime is one of the most important and significant material parameters. It i Minority carrier lifetime The minority carrier lifetime is one of the mos

Photoconductivity When light of sufficient energy is absorbed by a semiconductor, the number of free electrons and holes changes and raises the electrical conductivity of the semiconductor. Photocondu

Resistivity measurement and mapping Resistivity mapping and measurement The electrical resistivity directly depends on the density of the semiconductor and is therefore a useful parameter to monitor d