CN

MDPspot

Low cost table top single spot measurements on wafers or bricks.

Table top single spot measurements

Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different preparation stages, without built-in automatization. Optional hand operated z-axis for thicker samples up to 156 mm bricks. Standard software for result visualization.

MDPspot w
Includes an additional resistivity measurement option. Resistivity measurements for silicon only, either for wafers without height adjustment possibility, or for bricks. One of these two options has to be predefined.

Facts

  • contactless destruction free electrical semiconductor characterisation

  • μ-PCD measurement option included

  • advanced sensitivity for visualisation of so far invisible defects and investigations of epitaxial layers

  • integration of up to four lasers for a wide range of injection levels

  • access to primary data of single transients as well as maps for special evaluation purposes

Add ons

  • Spot size variation

  • Resistivity measurement (wafers)

  • Background/Bias light

  • Reflection measurement (MDP)

  • Software extension

  • Additional lasers

Contact us for more information.

Advantages

  • Table top unit for single point measurements of carrier lifetime, multi- or mono-crystalline silicon at different preparation stages, from as- grown up to final devices.

  • Small size, low cost and easy to use. Comes with a basic software for result visualisation on a small PC or notebook.

  • Suitable for wafers up to bricks, with easy to handle height adjustment.

  • Exemplary linescans

Technical specifications

mono or multi silicon wafers, bricks, cells, wafers after ­different processing steps like passivation or diffusion
sample sizeabove 50 x 50 mm² up to 12“ or 210 x 210 mm²
resistivity0.2 - 10³ Ohm cm
materialsilicon wafers, bricks, partially or fully processed wafers, compound semiconductors and beyond
measureable propertiescarrier lifetime
dimension360 x 360 x 520 mm, weight: 16 kg
power110/220 V, 50/60 Hz, 3 A

Detail

  • allows for single wafer investigation

  • different recipes for different wafer classes

  • monitoring of material, process quality and stability

Applications for MDPspot

Iron concentration determination

The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. Hence it is necessary to measure the iron concentration as exactly and fast as possible, with a very high resolution and preferably inline.

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Photoconductivity measurements of implanted samples

Implantation of B and P are used for many applications in the microelectronic industry, but so far there was no method available to check the homogeneity of these implantations without contacting the samples and changing their properties due to the necessary annealing steps. The difficulties so far...

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Trap concentration determination

Trapping centers are very important, in order to understand the behavior of carriers in the material and can also have an effect on solar cells. Hence it is desirable to measure the trap density and the activation energy of these trap centers with a high resolution.

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Injection dependent measurements

The minority carrier lifetime is strongly dependent on the injection (excess carrier concentration). From the shape and height of the lifetime curve information about the dominant recombination center as well as trapping center can be deduced.

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MPD series / µPCD

µPCD/MDP (QSS)

PID series

PID

XRD series / X-ray diffraction

X-ray diffraction

Branches

Projects

Projects

Company

Company