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PICTSStudio user friendly and advanced software for defect investigations The PICTSStudio offers features for defect investigation like, Operation and configuration area Results/charting View of singl

Materials Electrical properties and defects of a large variety of semiconductor materials, devices and dielectric materials can be investigated contact less and destruction free with our advanced meth

Penetration depth of different laser wavelength in silicon In silicon laser light with different wavelength has different penetration depth, hence the right laser should be used for different applicat

MD-PICTS MD-PICTS is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. MD-PICTS – microwave detected photo induced current transient

Comparison to µ-PCD and QSSPC Among carrier lifetime experiments, it is still one of the biggest problems to understand widely contradicting results as obtained by different experimental methods. With

Microwave detected photoconductivity The advanced method MDP is suited for defect investigation and mapping of wafers and ingotsWith its extraordinary sensitivity, resolution and speed MDP enables inj

Simulation of carrier profiles For measurements at thick samples like ingots, it is very important to simulate the carrier depth profile, that developes in the sample. The measured lifetime is strongl

Lifetime simulations To gain a better understanding of lifetime measurements and to achieve a better comparability between different measuring methods, it is necessary to perform simulations. Generali

Defect properties For the efficiency of solar cells the properties of a defect and its impact on the material quality are of great importance. Defect properties The properties of a defect and its impa

Diffusion length Diffusion length The diffusion length is the average distance that the excess carriers can cover before they recombine. Diffusion length depends on the lifetime and mobility of the ca