Search

Defects in 4H-SiC Investigated by surface photovoltage spectroscopy Defects in 4H-SiC investigated by surface photovoltage spectroscopy – power semiconductors Silicon carbide (SiC) high power, high vo

Defects and charge dynamics in 3C- and 4H-SiC investigated by surface Photoelectrochemical (PEC) and photocatalytic (PC) water splitting for hydrogen and/or oxygen generation is leading the way not on

Defect properties For the efficiency of solar cells the properties of a defect and its impact on the material quality are of great importance. Defect properties The properties of a defect and its impa

Customization Tailored Measurement Solutions for Unique Challenges Solutions Built for Your Needs At Freiberg Instruments, we understand that standard solutions may not always fit your specific requir

Measuring Crystal Quality Through XRD Reflection Analysis Assessing Crystal Quality via XRD Reflection Analysis Crystal quality cannot be directly measured, but several physical properties can be asse

Crystal Surface Orientation Mapping Surface mapping is key to identifying issues in crystal growth and manufacturing Precise Surface Orientation Mapping with Omega-Scan Even within a single crystal, s

Crystal Growth and Processing Solutions for Unrivaled Precision in Crystal Orientation Enhancing Accuracy in Grinding and Sawing: Optimize your Crystal Processing Freiberg Instruments sets new standar

Contactless detection of bulk polarization phenomena in semiconductors Aim Characterization of bulk polarization phenomena such as the bulk photo-voltaic effect (BPVE) in semiconductors requires the p