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Detection of CrB in silicon The determination of the chromium concentration is very important, since chromium is one of the most abundant and also most detrimental defects in silicon. (Alttext kürzen,

Detection of BO2 in silicon Boron-oxygen complexes are one of the main reasons why solar cells degrade, when irradiated with sun light. Hence it is important to measure the boron-oxygen density in sil

Investigation of material quality of GaAs Besides silicon GaAs is one of the most important materials in modern technology and therefore a method to investigate the material quality is needed. (Alttex

Silicon photovoltaic – Wafer check after diamond wire sawing Diamond wire sawing (DWS) is an established technology for wafering semiconductor ingots, as it has many advantages over other technologies

Study and monitoring of photocatalytic materials (TiO2) Aim Photocatalytic materials such as TiO 2 are of great interest, for example, for cleaning of industrial wastewater and for water splitting. Th

Contactless detection of bulk polarization phenomena in semiconductors Aim Characterization of bulk polarization phenomena such as the bulk photo-voltaic effect (BPVE) in semiconductors requires the p

Investigation of photocatalytic materials (BiVO4) Aim Photocatalytic materials such as BiVO 4 are of great interest, for example, for water splitting. Electronic defect states and surface passivation

Electronic transitions in diamond Aim For further development of optoelectronic devices and other applications based on diamond and nanodiamond, contactless characterization of electronic defect state

Resistance measurements on wafers and bricks The resistivity is one of the most important electrical parameters of a material. It is a key parameter for the performance of semiconductor devices as e.g

Characterization of Ga2O3 Aim Ga 2 O 3 is an ultra-wide band gap semiconductor with a great application potential. The contactless characterization of defect related transitions with high sensitivity