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Defects in 4H-SiC Investigated by surface photovoltage spectroscopy Defects in 4H-SiC investigated by surface photovoltage spectroscopy – power semiconductors Silicon carbide (SiC) high power, high vo

Dependencies of PID Susceptibility PID susceptibility is influenced by factors such as temperature, voltage, encapsulation materials, and the solar cell’s SiNx layer Temperature Higher heating plate t

Detection of BO2 in silicon Boron-oxygen complexes are one of the main reasons why solar cells degrade, when irradiated with sun light. Hence it is important to measure the boron-oxygen density in sil

Detection of CrB in silicon The determination of the chromium concentration is very important, since chromium is one of the most abundant and also most detrimental defects in silicon. (Alttext kürzen,

Determination of passivation homogeneity and surface recombination velocity For a lot of applications a well passivated surface is necessary e.g. in solar cells. With MDPmap and MDPingot it is possibl

Diana Trinks Organizer, decision-maker and fire extinguisher Always striving forward, rethinking and developing something new from what we have learned. Diana Trinks Executive Assistant Diana has been

Diffusion length Diffusion length The diffusion length is the average distance that the excess carriers can cover before they recombine. Diffusion length depends on the lifetime and mobility of the ca

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