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Light Beam Induced Current (LBIC) Light Beam Induced Current (LBIC) is a primarily in the photovoltaic sector well established method for the spatial resolved measurement of recombination active defec

Minority carrier Lifetime maps on 450 mm wafers Since several years, the microelectronic industry is planning to enlarge the wafer size from 300 mm (12 inch) to 450 mm (18 inch) diameter, in order to

Iron concentration determination The exact determination of the iron concentration is very important, since iron is one of the most abundant and also most detrimental defects in silicon. (Alttext kürz

Microwave Detected Photo Induced Current Transient Spectroscopy (MD-PICTS) is a modification of MDP, where temperature dependent measurements of the defect part of the transient are accomplished. In o

Minority carrier lifetime measurements on SiC In recent years the quality of SiC materials has improved profoundly and hence SiC is becoming more and more a competitor to Si for e.g. high-power device

Investigation of material quality of GaAs Besides silicon GaAs is one of the most important materials in modern technology and therefore a method to investigate the material quality is needed. (Alttex

p/n detection in bricks Changes in the conduction type of a multicrystalline brick are frequently observed, due to a high phosphorus concentration in the low quality feedstock. (Alttext kürzen, da zu

Detection of CrB in silicon The determination of the chromium concentration is very important, since chromium is one of the most abundant and also most detrimental defects in silicon. (Alttext kürzen,

Detection of BO2 in silicon Boron-oxygen complexes are one of the main reasons why solar cells degrade, when irradiated with sun light. Hence it is important to measure the boron-oxygen density in sil

Trap concentration determination Many lifetime measuring methods as QSSPC, µPCD or CDI, as well as MDP suffer from an anomalous high measured lifetime at very low injections. (Alttext kürzen, da zu la