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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
A close connection between production and research is important for the development of new applications and technologies. So far a few topics were published.
Jan Beyer, Nadine Schüler, Jürgen Erlekampf, Birgit Kallinger, Patrick Berwian, Kay Dornich, Johannes HeitmannMinority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity
Paul M. Jordan, Daniel K. Simon, Franz P.G. Fengler, Thomas Mikolajick, and Ingo Dirnstorfer2D Mapping of Chemical and Field Effect Passivation of Al2O3 on Si Substrates
Paul M. Jordan, Daniel K. Simon, Thomas Mikolajick, and Ingo DirnstorferBiasMDP: Carrier lifetime characterization technique with applied bias voltage
N. Schüler, B. Berger, A. Blum, K. Dornich, J.R. Niklas High Resolution Inline Topography of Iron in P-doped Mutlicrystalline Bricks by MDP
K. Dornich, N. Schüler, J.R. Niklas Injection dependent lifetime spectroscopy with a varying pulse length
K. Dornich, N. Schüler, B. Berger, J.R. Niklas Fast, high resolution, inline contactless electrical semiconductor characterization for photovoltaic applications by MDP
Bastian Berger, Nadine Schüler, Sabrina Anger, Bianca Gründig-Wendrock, Jürgen R. Niklas, Kay DornichContactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP)
N. Schüler, T. Hahn, K. Dornich and J.R. Niklas:Spatially resolved determination of trapping parameters in P-doped silicon by microwave detected photoconductivity 25th EUPVSEC Valencia, Spain
N. Schüler, D. Mittelstrass, K. Dornich and J.R. Niklas:High resolution inline detection of changes in the conduction type of multicrystalline silicon by contact less photoconductivity measurements 35th IEEE Photovoltaic Specialists conference, Honolulu Hawaii
N. Schüler, D. Mittelstrass, K. Dornich, J.R. Niklas and H. Neuhaus:Next generation inline minority carrier lifetime metrology on multicrystalline silicon bricks for pv 35th IEEE Photovoltaic Specialists conference, Honolulu Hawaii
N. Schüler, T. Hahn, K. Dornich, J.R. Niklas:Versatile simulation tool and novel measurement method for electrical characterization of semiconductors Solid State Phenomena 156-158, 241-246 (2010)
N. Schüler, T. Hahn, S. Schmerler, S. Hahn, K. Dornich and J.R. Niklas:Simulations of photoconductivity and lifetime for steady state and nonsteady state measurements Journal of Applied Physics 107 (2010), 064901
N. Schüler, T. Hahn, K. Dornich, J.R. Niklas, B. Gründig-Wendrock:Theoretical and experimental comparison of contactless lifetime measurement methods for thick silicon samples Solar Energy Materials & Solar Cells 94 (2010), 1076-1080
K. Dornich, N. Schüler, D. Mittelstraß, A. Krause, B. Gründig-Wendrock, K. Niemietz and J.R. Niklas:New spatial resolved inline metrology on multicrystalline silicon for PV (To be published in proceedings of 24th EU PVSEC)
S. Schmerler, T. Hahn, S. Hahn, J.R. Niklas, B. Gründig Wendrock:Explanation of positive and negative PICTS peaks in SI-GaAs J. Mater Sci: Mater Electron
T. Hahn, S. Schmerler, S. Hahn, J.R. Niklas:Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations J. Mater Sci: Mater Electron (2008) 19:S79-S82
K. Niemietz, K. Dornich, M. Gosh, A. Müller, J.R. NiklasContactless investigation of electrical properties and defect spectroscopy of mc-Si at low injection level 21st European Photovoltaic Solar Energy Conference, p. 361-364
K. Dornich, K. Niemietz, Mt. Wagner, J.R. NiklasContact less electrical defect characterisation of silicon by MD-PICTS Material Science in Semiconductor Processing, Elsevier, 241-245
S. Hahn, Franziska Christine Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J.R. Niklas, Erik JanzénContact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material Mater. Sci. Forum 600-603, 405 (2009).
S. Hahn, K. Dornich, T. Hahn, A. Köhler, J.R. Niklas, P. Schwesig, G. Müller
Contact free defect investigation of wafer annealed SI InP Material Science in Semiconductor Processing 9, Elsevier, 355-358
K. Dornich, T.Hahn, J.R. NiklasNon destructive electrical defect characterisation and topography of silicon wafers and epitaxial layers Mater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS
S. Hahn, T. Hahn, K. Dornich, B. Gruendig - Wendrock, J.R. Niklas, P. Schwesig, G. MüllerContact free defect investigation in as grown Fe doped SI - InP Mater. Res. Soc. Symp. Proc. Vol. 864, 2005 MRS