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Electrical semiconductor characterization
Luminescence dating, research, dosimetry and more
Contamination monitor, beta-aerosol monitor, dose rate meter and more
Mono- and Multi-crystalline wafer lifetime measurement device
State of the art system for topographic electrical characterization of multicrystalline bricks in fabs with high throughput....
Production integrated high speed wafer mapping of carrier lifetime. Single wafer topograms in less than one second a wafer.
Low cost table top lifetime measurement system for characterization of a variety of different silicon samples at different...
Mono- and Multi-crystalline wafer and brick lifetime measurement device
Flexible OEM unit for lifetime measurements at a variety of different samples ranging from mono- to multicrystalline silicon...
Microwave Detected Photo Induced Current Transient Spectroscopy
The minority carrier life time is sensitive for all kinds of electrically active defects in semiconductors and is therefore...
MDP is an advanced technology with a so far unsurpassed combination of sensitivity, speed and resolution for fab and lab...
for quality control of bifacial PERC/PERC+ solar cells and more
portable in field PID tester for solar modules
user friendly and advanced operating software
The PIDcon devices are designed to investigate the PID susceptibility for production monitoring of solar cells as well as tests...
Learn more about the reasons for PID and the how the susceptibility of solar cells, mini modules and encapsulation materials can...
For ultra-fast crystal orientation and rocking curve measurements
Flexible diffractometer for ultra-fast Omega Scan orientation determination
Smart diffractometer for ultra-fast Omega-scan of small samples.
Robust XRD equipment for fully automated in-line testing & alignment
for blanks, wafers & bars (AT, SC, TF, etc.)
three generations of X-ray engineers
in industrial production, R&D and more
discover the most convenient way of measuring orientation of single crystals
Our quality management system is an integrated process-oriented system with ISO 9001 certification.
In recent years the quality of SiC materials has improved profoundly and hence SiC is becoming more and more a competitor to Si for e.g. high-power devices. Since it is a wide-bandgap semiconductor, SiC has a number of advantages when compared to Si. The minority carrier lifetime is one of the fundamental parameters with regard to the performance of semiconductor devices, especially for the application of SiC in high voltage devices. Hence, it is necessary to perform lifetime engineering to gain the best performance of a certain device. In order to manufacture SiC devices with maximum yield, a material characterization with a high resolution is needed, together with a method to investigate the origin of defects in SiC to further improve the quality.
The two contactless and destruction free methods microwave detected photoconductivity (MDP) and photo induced current transient spectroscopy (MD-PICTS) are ideal methods for material quality and defect characterization.
The MDPmap combined with a UV-laser (355 nm) is the ideal tool for the spatial investigation of inhomogeneities in the minority carrier lifetime of SiC with a lower limit of 20 ns.
MD-PICTS measurements enable the temperature dependent investigation of the photoconductivity transient allowing the determination of the defect activation energy and capture cross sections. With the MD-PICTS system it is possible to measure down to 85 K with a liquid nitrogen bath cryostat or even down to 4 K with a helium cooling system. The upper temperature limit is 800 K and hence also deep trap levels can be investigated. With the additional mapping option small samples (2 x 2 cm) can be mapped at different temperatures.
Figure 1 and 2 show a minority carrier lifetime map and a photoconductivity transient of a 4H-SiC sample. Both was measured with the MDPmap with a resolution of 100 µm and a 355 nm laser.
Figure 3 demonstrates a MD-PICTS spectrum with two detected defect levels with activation energies of 0.12 eV and 0.22 eV. The measurement was conducted with an MDpicts and a liquid nitrogen bath.
For more information please read:
B. Berger, N. Schüler, S. Anger, B. Gruendig-Wendrock, J. R. Niklas, K. Dornich, physica status solidi A, 1-8. Contactless electrical defectcharacterization in semiconductorsby microwave detected photo inducedcurrent transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP)